Method for wet method corrosion of Terahertz quantum cascaded laser crestiform structure

Abstract

The invention discloses a wet etching method for a ridge structure of a terahertz quantum cascade laser characterized by firstly producing an etching mask and a hardener by means of lithography development, then removing the oxide film on the material surface of the device by diluted hydrochloric acid, furthermore fixing and putting the corresponding clamp for the device material in a vessel containing a diluent sulfuric acid etching solution, wet etching the solution by a magnetic stirring apparatus, quickly taking out the device material from the etching solution after erosion, washing the material by excessive deionized water, blowing the material to dryness by high purity nitrogen, ensuring the erosion depth by means of ellipsometer after removing the surface photo-resist mask in an acetone solution with the device material in, thereby the erosion is convenient and fast and the erosion depth can be more easily to control because of low erosion speed, specially under the conditions of large erosion depth and long erosion time, the advantage seems particularly outstanding.

Description

technical field [0001] The invention relates to a wet etching method for a ridge structure of a terahertz quantum cascade laser. Background technique [0002] A terahertz (THz) quantum cascade laser (QCL) is a unipolar device in which electrons radiate THz photons by transitioning between subbands. The active region of THz QCL is a multi-period cascade structure, and one cycle is a multi-quantum well structure. The number of periods in the active region ranges from dozens to hundreds. Molecular beam epitaxy is generally used to grow the THz QCL cascade structure. , due to the large number of cycles, the general growth process takes a long time. [0003] In the process of THz QCL, a very important step is to make the ridge structure, which is generally completed by wet etching or dry etching, and the advantages of wet etching over dry etching are: 1. Repeatability 2. There is almost no damage and no pollution to the surface of device materials. However, the sidewalls etche...

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Problems solved by technology

The etching accuracy must be very good, because if the etching is not in place, it will lead to the generation of parasitic resistance; if the etching is excessive, that is, it will be etched below the lower contact layer, and the device will be completely open.

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