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Method for producing solar blind ultraviolet detector

A UV detector, solar blind technology, applied in semiconductor devices, final product manufacturing, sustainable manufacturing/processing, etc., can solve problems such as no absorption, and achieve the effect of good repeatability and high application value

Inactive Publication Date: 2009-01-14
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This is mainly due to the fact that MgZnO with a band edge in the sun-blind band (220-280nm) is easy to form a structural phase separation, so there have been no reports of MgZnO thin films and their UV detectors with absorption and cut-off edges in this band. Especially using Cubic phase MgZnO thin films grown by metal organic chemical vapor deposition (MOCVD) have not been reported yet

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0011] On the MOCVD equipment, the C-plane sapphire is used as the substrate, the diethyl zinc is used as the magnesium source, the diethyl zinc is used as the zinc source, and the carrier gas is 99.9999% high-purity nitrogen. The single cubic phase MgZnO film is prepared according to the following process conditions:

[0012] The substrate temperature was 450°C, and the vacuum degree of the growth chamber was 2×10 4 Pa, oxygen flow rate is 550ml / min (pressure 2.5×10 5 Pa), make the Zn, Mg molar concentration ratio in the growth chamber be Zn / Mg=0.4 by flow control, obtain structural formula as Mg 0.7 Zn 0.3 Alloy films of O.

[0013] On the alloy film, the Au film was evaporated by thermal evaporation, and the Au film was etched by the traditional wet etching process to prepare interdigitated electrodes, that is, the Mg 0.7 Zn 0.3 O MSM structure sun-blind ultraviolet detector.

[0014] Through the layer Mg 0.7 Zn 0.3 The O thin film was characterized by XRD, and a sin...

Embodiment 2

[0016] On the MOCVD equipment, the C-face sapphire is used as the substrate, the diethyl zinc is used as the magnesium source, the diethyl zinc is used as the zinc source, and the carrier gas is 99.9999% high-purity nitrogen. The single cubic phase MgZnO film is prepared according to the following process conditions:

[0017] The substrate temperature was 450°C, and the vacuum degree of the growth chamber was 2×10 4 Pa, oxygen flow rate is 550ml / min (pressure 2.5×10 5 Pa), make the Zn, Mg molar concentration ratio in the growth chamber be Zn / Mg=0.65 by flow control, obtain structural formula as Mg 0.52 Zn 0.48 Alloy films of O.

[0018] On the alloy film, the Au film was evaporated by thermal evaporation, and the Au film was etched by the traditional wet etching process to prepare interdigitated electrodes, that is, the Mg 0.52 Zn 0.48 O MSM structure sun-blind ultraviolet detector.

[0019] by Mg 0.52 Zn 0.48 The O thin film was characterized by XRD, and a single diffr...

Embodiment 3

[0021] On the MOCVD equipment, the C-face sapphire is used as the substrate, the diethyl zinc is used as the magnesium source, the diethyl zinc is used as the zinc source, and the carrier gas is 99.9999% high-purity nitrogen. The single cubic phase MgZnO film is prepared according to the following process conditions:

[0022] The substrate temperature was 450°C, and the vacuum degree of the growth chamber was 2×10 4 Pa, oxygen flow rate is 550ml / min (pressure 2.5×10 5 Pa), make the Zn, Mg molar concentration ratio in the growth chamber be Zn / Mg=1 by flow control, obtain structural formula as Mg 0.5 Zn 0.5 Alloy films of O.

[0023] On the alloy film, the Au film was evaporated by thermal evaporation, and the Au film was etched by the traditional wet etching process to prepare interdigitated electrodes, that is, the Mg 0.52 Zn 0.48 O MSM structure sun-blind ultraviolet detector.

[0024] by Mg 0.5 Zn 0.5 The O thin film was characterized by XRD, and a single diffraction ...

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PUM

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Abstract

The invention relates to a preparation method used for a ultraviolet detector, in particular to a method used for preparing a solar blind ultraviolet detector, comprising the steps as follows: a metal organic chemical gas phase deposition method is used for preparing an MgZnO film layer on a sapphire substrate; an Au film layer is steam-plated on the MgZnO film layer; a wet method is used for etching the Au film layer so as to prepare an interdigital electrode; the O-Zn-Mg film layer is the MgZnO film which has single cubic phase and an absorbing edge ranging from 220 to 260nm and is obtained under the process conditions as follows: growth temperature ranging from 300 to 500 DEG C, vacuum degree of a growth chamber of 2 multiplied by 10<4>Pa, carrier gas of nitrogen with high purity of 99.9999 percent, bis-Mg is taken as Mg source and diethyl Zn as Zn source, the molar concentration ratio Zn / Mg of Zn and Mg in the growth chamber is led to be 0.4 to 1 by controlling the flow rate, and the oxygen pressure is led to be 2.5 multiplied by 10<5>Pa and the flow rate is 550ml / min. The cubic phase MgZnO alloy film obtained by the method of the invention generates no phase separation and has extremely good repeatability; the restriction ratio of ultraviolet / visible light is more than 3 magnitudes and the optical response intercepting edge is continuously adjustable within 230 to 280nm.

Description

technical field [0001] The invention relates to a preparation method of an ultraviolet detector, in particular to a preparation method of an ultraviolet detector responsive to the sun-blind ultraviolet band. Background technique [0002] At present, ultraviolet detection technology has become a dual-use detection technology for both military and civilian use, especially in ultraviolet warning and ultraviolet guidance. At present, in the preparation of missile early warning detectors, there is an urgent need for materials that respond in the 220nm to 280nm band and have an absorption edge near 280nm. MgZnO crystal thin films, as emerging semiconductor optoelectronic materials, have aroused great interest. The edge is continuously adjustable from 160nm to 375nm. In recent years, people have done a lot of research work on ZnMgO ultraviolet detectors. The University of Maryland has reported that the photoresponse cut-off edge of cubic ZnMgO MSM structure ultraviolet detectors is...

Claims

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Application Information

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IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 鞠振刚张吉英单崇新申德振姚斌赵东旭张振中李炳辉
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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