Method for manufacturing bismuth lanthanum titanate (BLT) ferro-electricity film at low-temperature

A technology of bismuth lanthanum titanate and ferroelectric thin film is applied in the field of low-temperature preparation using the combination of complexing agent complexing technology and hydrothermal reaction technology. problems, to achieve the effect of improving film performance, low cost and convenient implementation

Inactive Publication Date: 2008-12-10
CHINA JILIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Regardless of the gas-phase method or the liquid-phase method, the raw materials used are metal organic salt compounds, which are very expensive
Moreover, the ferroelectric thin film prepared by the sol-gel method has a large leakage current and a high film-forming temperature.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] 1: Preparation of precursor solution

[0020] Weigh bismuth nitrate (Bi(NO 3 ) 3 ·5H 2 O) 0.03445mol, lanthanum nitrate (La(NO 3 ) 3 ·6H 2 O) 0.0075mol, butyl titanate (Ti(C 4 h 9 O) 4 ) 0.03mol three components, citric acid 0.15mol. Mix the weighed bismuth nitrate and lanthanum nitrate, add a corresponding amount of citric acid aqueous solution at a molar ratio of 1:2, heat and stir with a magnetic stirrer, and keep the temperature at 45-55°C until the mixed solid is completely dissolved to obtain bismuth, lanthanum in citric acid solution. Add the weighed butyl titanate to the citric acid solution with a corresponding molar ratio of 1:2 at a pH value of 6-7, heat and stir, and keep the temperature at 50-70°C to form a stable pale yellow transparent solution, and mixed with citric acid solution containing bismuth and lanthanum to obtain a precursor solution containing Ba, La and Ti; by adjusting the viscosity, pH value and total volume of the solution with et...

Embodiment 2

[0029] 1: Preparation of precursor solution

[0030] Weigh bismuth nitrate (Bi(NO 3 ) 3 ·5H 2 O) 0.03445mol, lanthanum nitrate (La(NO 3 ) 3 ·6H 2 O) 0.0075mol, butyl titanate (Ti(C 4 h 9 O) 4 ) 0.03mol and other three components, citric acid 0.15mol. Mix the weighed bismuth nitrate and lanthanum nitrate, add a corresponding amount of citric acid aqueous solution at a molar ratio of 1:2, heat and stir with a magnetic stirrer, and keep the temperature at 45-55°C until the mixed solid is completely dissolved to obtain bismuth, lanthanum in citric acid solution. Add the weighed butyl titanate to the citric acid solution with a corresponding molar ratio of 1:2 at a pH value of 6-7, heat and stir, and keep the temperature at 50-70°C to form a stable pale yellow transparent solution, and mixed with citric acid solution containing bismuth and lanthanum to obtain a solution containing Ba, La and Ti; by adjusting the viscosity, pH value and total volume of the sol with ethylen...

Embodiment 3

[0039] 1: Preparation of precursor solution

[0040] Weigh bismuth nitrate (Bi(NO 3 ) 3 ·5H 2 O) 0.03445mol, lanthanum nitrate (La(NO 3 ) 3 ·6H 2 O) 0.0075mol, butyl titanate (Ti(C 4 h 9 O) 4 ) 0.03mol three components, citric acid 0.15mol. Mix the weighed bismuth nitrate and lanthanum nitrate, add a corresponding amount of citric acid aqueous solution at a molar ratio of 1:2, heat and stir with a magnetic stirrer, and keep the temperature at 45-55°C until the mixed solid is completely dissolved to obtain bismuth, lanthanum in citric acid solution. Add the weighed butyl titanate to the citric acid solution with a corresponding molar ratio of 1:2 at a pH value of 6-8, heat and stir, and keep the temperature at 50-70°C to form a stable pale yellow transparent solution, and mixed with citric acid solution containing bismuth and lanthanum to obtain a solution containing Ba, La and Ti; by adjusting the viscosity, pH value and total volume of the solution with ethylene gly...

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Abstract

The invention relates to a method for preparing a BLT ferroelectric film used for a ferroelectric storage at a low temperature. The preparation method consists of the complexing agent technique and the hydro-thermal reaction low temperature preparation technique. Firstly, the complexing agent technique is adopted, a BLT precursor solution is prepared by taking inorganic salt as a raw material and a film with required thickness is coated on the cleaned Pt / Ti / SiO2Si underlay rotationally, the thermal treatment is performed at a temperature of between 350 and 450 DEG C, and then the film after the thermal treatment is put into a high pressure reaction kettle to perform the hydro-thermal chemical reaction; the reaction temperature is between 150 and 300 DEG C, the reaction time lasts for 2 to 48 hours; the product is cooled in the furnace, washed and dried at a temperature of 80 DEG C so that the BLT ferroelectric film with the thickness between 400 and 900 nanometers is produced. The method has simple preparation technology, low preparation temperature, convenient operation and low cost and can be compatible with the microelectronic technology.

Description

technical field [0001] The present invention relates to layered perovskite Bi 3.15 La 0.75 Ti 3 o 12 (BLT) The preparation method of ferroelectric thin film, especially the low-temperature preparation method using complexing agent complexation technology and hydrothermal reaction technology. Background technique [0002] As ferroelectric random access memory (FRAM) has been increasingly widely used in various utility meters (such as electricity meters, water meters, gas meters, etc.), measurement and medical instruments, contactless smart cards, access control systems and automotive black boxes application. FRAM is currently the main research and development direction of ferroelectric thin film memory, and it is an area that is highly valued internationally. As FRAM materials, the two most promising materials are lead zirconate titanate (PZT) and strontium bismuth tantalate (SBT). Among them, PZT has better ferroelectric properties and is prepared at a lower temperature...

Claims

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Application Information

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IPC IPC(8): C04B35/462C04B35/475C04B41/50
Inventor 王疆瑛
Owner CHINA JILIANG UNIV
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