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Mesopore titanic oxide /zinc oxide composite film preparation method

A technology of mesoporous titanium oxide and composite thin film, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of increased probability, increased dark current, increased transmission and residence time, etc., and achieves low cost, easy control, and preparation The effect of simple method

Inactive Publication Date: 2008-11-26
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These localized states form traps, constraining the movement of electrons in the film, increasing the transmission and residence time of electrons in the film, thus increasing the probability of recombination of electrons and electrolytes, resulting in an increase in dark current, thereby reducing the overall capacity of the DSSC battery. efficiency

Method used

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  • Mesopore titanic oxide /zinc oxide composite film preparation method
  • Mesopore titanic oxide /zinc oxide composite film preparation method
  • Mesopore titanic oxide /zinc oxide composite film preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] TiO 2 Preparation of / ZnO composite precursor solution: Dissolve 1.3g triblock polymer polyoxyethylene-polyoxypropylene-polyoxyethylene (P123) in absolute ethanol, add 3.2g concentrated hydrochloric acid after completely dissolving, and stir for 0.5 hours ; Then add 5ml of isopropyl titanate dropwise, stir for 0.5 hours, then add 0.2g of zinc acetate dihydrate dropwise, stir at room temperature for 3 hours, and let stand for 24 hours for use.

[0025] Clean the substrate: the substrate is a single crystal silicon wafer with a crystal orientation of 100. The substrate was ultrasonically cleaned in absolute ethanol for 15 minutes, then ultrasonically cleaned in acetone for 15 minutes, and then ultrasonically cleaned in absolute ethanol for 15 minutes, N 2 Blow dry and set aside.

[0026] Spin coating of composite thin films: the prepared TiO 2 / ZnO composite precursor solution was dropped onto the rotating substrate, the rotation speed was 2000 rpm, and the spin coatin...

Embodiment 2

[0030] TiO 2 Preparation of / ZnO composite precursor solution: Dissolve 1.3g triblock polymer polyoxyethylene-polyoxypropylene-polyoxyethylene (P123) in absolute ethanol, add 3.2g concentrated hydrochloric acid after completely dissolving, and stir for 0.5 hours ; Then add 6.2ml of tetra-n-butyl titanate dropwise, stir for 0.5 hours, then add 0.44g of zinc acetate dihydrate dropwise, stir at room temperature for 3 hours, and let stand for 24 hours for use.

[0031] Clean the substrate: the substrate is a single crystal silicon wafer with a crystal orientation of 100. The substrate was ultrasonically cleaned in absolute ethanol for 15 minutes, then ultrasonically cleaned in acetone for 15 minutes, and then ultrasonically cleaned in absolute ethanol for 15 minutes, N 2 Blow dry and set aside.

[0032] Spin coating of composite thin films: the prepared TiO 2 / ZnO composite precursor solution was dropped onto the rotating substrate, the rotation speed was 2000 rpm, and the spin...

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Abstract

The invention discloses a process for preparing mesoporous titania / zinc oxide composite films. The process comprises that in organic solvent, a block polymer template is utilized to induce the precursor solution of titanium and the precursor of zinc to hydrolyze to form an organic-inorganic uniform ordered meso-structure, and then the template is removed and the film is crystallized, thereby obtaining a mesoporous composite film of which the framework is nanocrystal. The process for preparing mesoporous titania / zinc oxide composite films has the advantages that the process for preparing mesoporous titania / zinc oxide composite films is simple in technique, and relatively low in cost, can easily control the components of composite films, and can adjust the content of TiO2 and ZnO in the mesoporous film by controlling the addition amount of the precursor of titanium and zinc.

Description

technical field [0001] The invention relates to a method for preparing a mesoporous semiconductor composite film, specifically a method for preparing mesoporous titanium dioxide / zinc oxide (TiO 2 / ZnO) composite film method. Background technique [0002] Mesoporous TiO 2 The material has tunable pore structure, high specific surface area and good photoelectric performance, showing broad application prospects in dye-sensitized solar cells, photocatalysts, chemical photosensitization, filtration, biomedical materials and gas sensors. In recent years, mesoporous TiO 2 The study of thin film materials has attracted the attention of scientists, especially the dye-sensitized nanocrystalline titanium dioxide photoelectrochemical solar cell (DSSC) has become an important research topic because of its cheap, efficient and simple process. Mesoporous TiO 2 Thin film materials can absorb more sensitizers, sensitizers and TiO 2 The C-O-Ti bond is formed on the surface, which improve...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0264
Inventor 陶俊超孙艳乐阳葛美英陈鑫戴宁
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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