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Controllable doping of SiC single crystal low-dimensional nano material

A low-dimensional nano- and single-crystal technology, applied in the growth of polycrystalline materials, single crystal growth, single crystal growth, etc., can solve the problems of controllable doping of SiC single crystal low-dimensional nanomaterials, which have not been reported, and achieve high yield High, smooth surface, strong controllable effect

Inactive Publication Date: 2008-11-26
NINGBO UNIVERSITY OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The above method has greatly enriched the preparation science of SiC low-dimensional nanomaterials, but the controllable doping of SiC single crystal low-dimensional nanomaterials has not been reported at home and abroad so far.

Method used

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  • Controllable doping of SiC single crystal low-dimensional nano material
  • Controllable doping of SiC single crystal low-dimensional nano material
  • Controllable doping of SiC single crystal low-dimensional nano material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] Weigh a total of 10 g of the initial raw material (5wt% aluminum isopropoxide + 95wt% polysilazane), put it into a nylon resin ball mill jar and planetary ball mill it for 12 hours, mix it evenly, place it in a 99 alumina ceramic crucible, and place it in a 0.1MPa N 2 Under the gas protection atmosphere, the temperature was raised from room temperature to 260°C at 10°C / min in a tubular sintering furnace, and kept for 0.5 hours for cross-linking and solidification to obtain an amorphous SiAlCN solid. Put the SiAlCN solid into a nylon resin ball mill jar, add 3wt% FeCl 2 The powder was used as a catalyst in a high-energy ball mill for dry ball milling for 24 hours, then the SiAlCN powder obtained after the high-energy ball milling was placed in a 99 alumina ceramic crucible, and placed in a 0.1MPa flow (200ml / min) Ar atmosphere under the protection of In the tube furnace, the temperature was raised from room temperature to 1450 °C at 10 °C / min for high-temperature pyroly...

Embodiment 2

[0036] Weigh a total of 10 g of the initial raw material (0.2wt% aluminum isopropoxide+99.8wt% polysilazane), put it into a nylon resin ball mill jar for planetary ball milling for 12 hours, mix it uniformly and put it in a 99% alumina ceramic crucible. 0.1MPa N 2 Under the gas protection atmosphere, the temperature was raised from room temperature to 260°C at 10°C / min in a tubular sintering furnace, and kept for 0.5 hours for cross-linking and solidification to obtain an amorphous SiAlCN solid. Put the SiAlCN solid into a nylon resin ball mill jar, add 3wt% FeCl 2 The powder was used as a catalyst in a high-energy ball mill for dry ball milling for 24 hours, then the SiAlCN powder obtained after the high-energy ball milling was placed in a 99 alumina ceramic crucible, and placed in a 0.1MPa flow (200ml / min) Ar atmosphere under the protection of In the tube furnace, the temperature was raised from room temperature to 1450 °C at 10 °C / min for high-temperature pyrolysis, kept for...

Embodiment 3

[0038] Weigh a total of 10g of the initial raw material (1wt% aluminum isopropoxide + 99wt% polysilazane), put it into a nylon resin ball mill jar and planetary ball mill it for 12 hours, mix it evenly, place it in a 99 alumina ceramic crucible, and place it in a 0.1MPa N 2 Under the gas protection atmosphere, the temperature was raised from room temperature to 260°C at 10°C / min in a tubular sintering furnace, and kept for 0.5 hours for cross-linking and solidification to obtain an amorphous SiAlCN solid. Put the SiAlCN solid into a nylon resin ball mill jar, add 3wt% FeCl 2 The powder was used as a catalyst in a high-energy ball mill for dry ball milling for 24 hours, then the SiAlCN powder obtained after the high-energy ball milling was placed in a 99 alumina ceramic crucible, and placed in a 0.1MPa flow (200ml / min) Ar atmosphere under the protection of In the tube furnace, the temperature was raised from room temperature to 1450 °C at 10 °C / min for high-temperature pyrolys...

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Abstract

The invention relates to a new method for realizing the controllable doping of SiC single crystal low dimensional nano material by co-pyrolyzing organic precursors, which comprises the following concrete steps: (1) ball milling and well mixing two organic precursors PSZ and aluminum isopropoxide according to different proportions; (2) after mixing, cross-linking and solidifying the precursors to obtain amorphous solid; (3) putting the amorphous solid into a nylon resin ball milling tank and introducing a catalyst, and carrying out ball milling in a ball mill; (4) high temperature pyrolyzing the milled mixture. The method can realize the controlling and designing of the doping level of SiC single crystal low dimensional nano material on molecular level, therefore, the control of properties such as photoelectricity, and the like, of the SiC single crystal low dimensional nano material is realized and certain foundation for developing nano devices thereof is laid.

Description

technical field [0001] The invention relates to a method for controllable doping of SiC single crystal low-dimensional nanomaterials, belonging to the technical field of material preparation. technical background [0002] Nanotechnology is the frontier and focus of scientific and technological development in the 21st century, and will be of great significance to the country's future scientific and technological progress, economic and social development, and national defense security. More than 50 countries in the world have regarded nanotechnology as the main driver of technological innovation in the 21st century, and have successively formulated development strategies and plans to guide and promote the development of nanotechnology in their own countries. In early 2006, my country formulated the "National Medium and Long-Term Science and Technology Development Plan (2006-2020)", which included nanoscience as one of the four main directions of basic scientific research durin...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/36
Inventor 杨为佑高凤梅
Owner NINGBO UNIVERSITY OF TECHNOLOGY
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