Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A method of preparing sulfur-doped graphene by chemical vapor deposition

A technology of sulfur-doped graphene and chemical vapor deposition, which is applied in the field of materials to achieve the effect of controllable doping and low economic cost

Active Publication Date: 2017-05-31
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In graphene, electrons can move extremely efficiently, while traditional semiconductors and conductors, such as silicon and copper, do not perform as well as graphene

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A method of preparing sulfur-doped graphene by chemical vapor deposition
  • A method of preparing sulfur-doped graphene by chemical vapor deposition
  • A method of preparing sulfur-doped graphene by chemical vapor deposition

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] Such as Figure 1 ~ Figure 3 As shown, the present embodiment provides a method for preparing sulfur-doped graphene by chemical vapor deposition, at least including the following steps:

[0032] First, step 1) S11 is performed, providing a metal substrate, and placing the metal substrate in a chemical vapor deposition reaction chamber.

[0033] As an example, the structure of the chemical vapor deposition reaction chamber is as follows figure 1 As shown, it includes a tube furnace 101 , a quartz tube 102 and a gas passage 103 .

[0034] As an example, the metal substrate is copper foil, and the size of the copper foil is 2cm*2cm. Of course, the size of the copper foil can be changed according to actual requirements, so as to prepare sulfur-doped graphene of different sizes to meet different technological requirements.

[0035] Then proceed to step 2) S12, using an inert gas to ventilate and exhaust the reaction chamber.

[0036] As an example, the aeration and exhau...

Embodiment 2

[0048] Such as Figure 1 ~ Figure 3 As shown, the present embodiment provides a method for preparing sulfur-doped graphene by chemical vapor deposition, at least including the following steps:

[0049] First, step 1) S11 is performed, providing a metal substrate, and placing the metal substrate in a chemical vapor deposition reaction chamber.

[0050] As an example, the structure of the chemical vapor deposition reaction chamber is as follows figure 1 As shown, it includes a tube furnace 101 , a quartz tube 102 and a gas passage 103 .

[0051] As an example, the metal substrate is an electroplated copper layer with a thickness of 10 μm on the surface of a silicon wafer with an oxide layer. During the preparation process, the size of the electroplated copper can be changed according to actual requirements, so as to prepare sulfur-doped graphene of different sizes to meet different process requirements.

[0052] Then proceed to step 2) S12, using an inert gas to ventilate and...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a method for preparation of sulfur doped graphene by chemical vapor deposition. The method includes the steps of:1) providing a metal substrate, and placing the metal substrate in a chemical vapor deposition reaction chamber; 2) employing an inert gas to conduct ventilation and exhaust treatment on the reaction chamber; 3) introducing hydrogen into the reaction chamber under a first temperature so as to reduce the oxide on the metal substrate surface; 4) under a second temperature, introducing a carbon source gas and a sulfur source gas into the reaction furnace to undergo reaction so as to form sulfur doped graphene on the metal substrate surface; and 5) cooling the reaction chamber in a hydrogen and inert gas atmosphere. The method provided by the invention can realize simple and efficient preparation of sulfur doped graphene on the metal substrate. With a low economic cost, the method can be used for mass production of large area sulfur doped graphene, can realize controllable doping on graphene and facilitates subsequent device fabrication.

Description

technical field [0001] The invention belongs to the technical field of materials, in particular to a method for preparing sulfur-doped graphene by chemical vapor deposition. Background technique [0002] Graphene is a planar monoatomic layer film material formed by carbon atoms arranged in a two-dimensional regular hexagonal honeycomb lattice. Since graphene has a series of properties such as outstanding thermal conductivity and mechanical properties, high electron mobility, and half-integer quantum Hall effect, since it was first discovered in 2004, graphene has attracted widespread attention from the scientific community and set off a wave. boom in research. [0003] Graphene is made of sp 2 Hybridized carbon atoms are bonded, and a single-layer planar graphite with a hexagonal lattice honeycomb two-dimensional structure has extremely high crystal quality and electrical properties. As a strictly two-dimensional crystalline material, graphene has unique physical properti...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C01B32/186
Inventor 李铁梁晨王跃林
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com