Transparent conductive polymer as amorphous silicon battery p layer

Abstract

The present invention discloses application of p type polymer film in amorphous silicon photovoltaic device. The 10-30 nanometer transparent p type polymer produced by vacuum coating can be used as p layer of p-i-n type amorphous silicon solar cell to reduce light absorption loss and improve output power.

Description

technical field [0001] The invention belongs to the field of solar energy materials, and in particular relates to material technology applied to thin-film photovoltaic devices. Background technique [0002] In recent years, the development of thin-film solar photovoltaic cells and large-area modules or templates (photovoltaic modules) has attracted worldwide attention. The great potential of hydrogenated amorphous silicon, especially nanocrystalline silicon (nano-silicon) for wide application in commercial and residential optoelectronic devices has been shown. An important feature of hydrogenated silicon thin-film optoelectronic devices made at a temperature below 260°C is the use of cheap thin-film substrate materials and superb processing methods and equipment when depositing the semiconductor silicon thin film and electrical contact layer over a large area , so that it has the advantages of low production cost and excellent performance at the same time. The laser scribi...

AI Technical Summary

Problems solved by technology

[0008] Unfortunately, for the wide-bandgap amorphous silicon alloy p-layer, the wider bandgap and lower optical losses lead to resistance due to the contact barrier between the interface and the transparent conductive oxide front electrode (front contact layer). The rate of increase and the internal resistance of the p-layer increase, thereby reducing the collection efficiency of photocurrent

These are the fundamental limitations of the performance of traditional silicon thin-film solar cells

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