Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Forming method of L-shaped side wall

A sidewall, L-shaped technology, used in electrical components, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve problems such as substrate surface damage, and achieve the effect of improving uniformity and preventing damage.

Inactive Publication Date: 2008-06-11
SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
View PDF0 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a method for reducing damage to the surface of the substrate in an L-shaped side wall forming process, so as to solve the problem of damage to the surface of the substrate by dry etching in the traditional process

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Forming method of L-shaped side wall
  • Forming method of L-shaped side wall
  • Forming method of L-shaped side wall

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0020] In order to make the purpose and features of the present invention more comprehensible, the specific implementation manners of the present invention will be further described below in conjunction with the accompanying drawings.

[0021] Please refer to FIG. 2 to FIG. 6 , which are schematic views of the forming process of the L-shaped side wall according to an embodiment of the present invention. First, a composite dielectric layer 2 is deposited on a substrate 1 with a gate 3 structure, wherein the composite dielectric layer 2 includes a sacrificial layer 21 , a dielectric layer 22 and an oxide layer 23 (see FIG. 2 ). In this embodiment, the substrate 1 is, for example, a silicon substrate, the composite dielectric layer 2 is a silicon monoxide / silicon nitride / silicon oxide structure, that is, the sacrificial layer 21 and the oxide layer 23 are silicon oxide layers, and the dielectric layer 22 is silicon nitride layer.

[0022] Next, the sacrificial layer 21 on the si...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for reducing substrate surface damage in the L-shaped side wall forming technology and a corresponding forming method for an L-shaped side wall. A partial dry etching and a partial wet corrosion is used to replace the prior dry etching to process a dielectric layer, thus reducing the damage on the substrate surface during etching process. The specific steps are asfollows: forming the L-shaped side wall from a composite dielectric layer which is deposited on the substrate, wherein, the composite dielectric layer comprises a sacrifice layer, a dielectric layer and an oxidized layer. The method for reducing the substrate surface damage is used for etching process of the composite dielectric layer. The method comprises the following steps: removing the dielectric layer which is exposed outside and has certain thickness by the dry etching; and removing the dielectric layer which is exposed outside and has remaining thickness by the wet corrosion.

Description

technical field [0001] The invention relates to an integrated circuit process method, in particular to a method for forming an L-shaped side wall. Background technique [0002] With the continuous shrinking of the feature size of integrated circuits, the spacing between polysilicon gates is also becoming smaller and smaller, which puts forward higher requirements on the filling performance of the dielectric layer before the metal layer. In the technology generation before 0.13um, silicon dioxide containing boron and phosphorus was often used as the filling medium. However, the filling capacity of silicon dioxide containing boron and phosphorus is limited. In order to prolong its service life, the space between polysilicon gates must be increased to make the dielectric easier to fill. The L-shaped side wall is a new technology developed based on this requirement. [0003] The L-shaped sidewall removes the uppermost layer of silicon oxide and silicon nitride through anisotro...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/28H01L21/311H01L21/336
Inventor 顾学强
Owner SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com