Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Semiconductor device and method of fabricating the same

A semiconductor and device technology, applied in the field of semiconductor devices and their manufacturing, can solve problems such as damage to the contact characteristics and reliability of semiconductor devices

Active Publication Date: 2008-04-02
SAMSUNG ELECTRONICS CO LTD
View PDF0 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Accordingly, contact characteristics and reliability of semiconductor devices may be impaired

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor device and method of fabricating the same
  • Semiconductor device and method of fabricating the same
  • Semiconductor device and method of fabricating the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0015] However, this invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein.

[0016] Therefore, in the embodiments of the present invention, when detailed descriptions of known processes, structures and techniques involved herein would obscure the subject matter of the present invention, such detailed descriptions will be omitted.

[0017] The terminology used herein is for the purpose of describing specific embodiments only, and is not intended to limit the present invention. As used herein, singular forms are intended to include plural forms unless the context clearly dictates otherwise. It should also be understood that when applied to this specification, the word "comprising" refers to the existence of listed elements, steps, operations and / or components, but does not exclude one or more other elements, steps, operations and / or components existence or increase. Additionally, the term "and / or" includes...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Tensile stressaaaaaaaaaa
Compressive stressaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

A semiconductor device comprises: a first stress film covering af first transistor zone and at least a part of a third gate electrode in the boundary zone; a second stress film covering a second transistor zone and overlapping with at least a part of the first stress film on the third gate electrode in the boundary zone; and an interlayer dielectric film formed on the first and the second stress films. The semiconductor device also comprises: a plurality of first contact hole passing through the interlayer dielectric film in the first transistor zone and the first stress film; a plurality of second contact hole passing through the interlayer dielectric film in the second transistor zone and the second stress film; and a third contact hole passing through the interlayer dielectric film in the interface zone, the second stress film and the first stress film. A depressed portion at the upper side of the third electrode formed on the third contact hole has a depth larger or equal to the depth of the depressed portion at the upper side of the first gate electrode of the first contact hole.

Description

technical field [0001] The present invention relates to a semiconductor device and a manufacturing method thereof, and more particularly, to a semiconductor device including a double stress film and a manufacturing method thereof. Background technique [0002] Due to the high integration and high speed of Metal Oxide Semiconductor Field Effect Transistors (MOSFETs), various methods have been researched to form transistors that do not generate errors and have improved performance. In particular, a number of methods are under development aimed at increasing the mobility of electrons and holes to fabricate high-performance transistors. [0003] A method of applying physical stress to the channel region to change the energy band structure of the channel region, which aims to increase the mobility of electrons or holes, may be performed. For example, n-channel metal-oxide-semiconductor (NMOS) transistors have improved performance when tensile stress is applied to the channel, an...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/8238H01L21/768H01L27/092H01L23/522
CPCH01L21/76829H01L29/7843H01L21/823871H01L21/76832H01L21/76816H01L21/823807H01L21/76802H01L2924/0002H01L2924/00H01L21/31H01L21/8238H01L21/28
Inventor 南瑞佑文永俊慎烘縡李来寅
Owner SAMSUNG ELECTRONICS CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com