Medium infrared solid laser of semiconductor laser pump

Abstract

The IR solid laser for semi-conductor laser pumping comprises: at one light path, a semi-conductor laser bonded with Tm:YAP and Cr:ZnSe crystal, a focus lens, an input lens, a laser medium, and an output lens, wherein the bonded crystal interface forms a Brewster angle with the laser resonant cavity. This invention uses simple structure to output higher power.

Description

technical field [0001] The invention relates to an all-solid-state laser, in particular to a mid-infrared solid-state laser pumped by a semiconductor laser. Background technique [0002] The ever-growing disciplines of environment, engineering, medicine, biology and chemistry have made great progress in 1-3 μm ultra-short pulse and metal-doped crystal ultra-broadband continuous lasers. Metal ion-doped ultra-wide pulse mid-infrared solid-state lasers are increasingly used in gas detection, remote sensing, communication, ophthalmology, neurosurgery and other fields. [0003] Chromium-doped zinc selenide Cr:ZnSe crystals with ultra-broad absorption band have some remarkable features: high emission cross section σ em =1.3×10 -18 cm 2 , negligible excited state absorption, very good chemical and mechanical stability, and thermal conductivity similar to sapphire. These features make this material a great potential as a gain medium for diode directly pumped mid-infrared lasers ...

AI Technical Summary

Problems solved by technology

[0005] At present, Cr:ZnSe lasers directly pumped by semiconductor laser arrays face an obvious contradiction: when directly pumped by semiconductor lasers, the wavelength of semiconductor lasers available in China is less than 1.6 μm, and the gain coefficient of pump light in ZnSe crystals is small, so Laser output power is relatively low

However, when using other lasers with relatively large wavelengths to pump, the increase in power will inevitably lead to an increase in the overall volume of the laser and lose some of its advantages.

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