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LED based on tuned distribution bragg reflector

A Bragg reflector and light-emitting layer technology, applied in lasers, phonon exciters, laser parts, etc., can solve the problems of limited application, reduced reflectivity, low DBR all-round reflectivity, etc., and achieves simple process and full-angle reflection. rate increase effect

Inactive Publication Date: 2007-09-19
SHENZHEN UNIV
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Problems solved by technology

However, this traditional DBR structure is very sensitive to the incident angle of light waves. As the angle between the incident light and the vertical direction increases, the reflectivity decreases sharply.
Therefore, although its vertical reflectivity is high, the omnidirectional reflectivity of DBR is relatively low, which limits its application in LED
[0006] In order to solve the problem of low omni-directional reflectivity of traditional DBR reflectors and improve the light output efficiency of LEDs, a new type of multi-layer thin film reflective structure——Tuned Distributed Bragg Reflector (TDBR) and its design concept, and a A new LED structure based on TDBR structure

Method used

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  • LED based on tuned distribution bragg reflector
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  • LED based on tuned distribution bragg reflector

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Embodiment Construction

[0029] 1. Establish a calculation model for the reflectivity of the multilayer material thin film structure. For a multi-layer material thin film structure with given parameters (as shown in Figure 3), its reflection coefficient for incident light of a specific wavelength incident in a specific direction is obtained by iterative calculation of the following two formulas.

[0030]

[0031] δ k-1 =4πn k-1 h k-1 cosθ k-1 / λ (2)

[0032] Among them, r k and r k+1 are the reflection coefficients of the interfaces of the kth layer and the k+1th layer, respectively, h k with Respectively, the thickness of the medium of the kth layer and the equivalent refractive index of the interface of the kth layer (all reflective layers below the interface of the kth layer are equivalent to one layer) refractive index, θ k-1 and δ k-1 are the phase change of the light wave in the k-1 layer medium and the angle between its propagation direction and the vertical direction, and λ is th...

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Abstract

The invention provides a novel tuned distributed Bragg reflectors TDBR and a novel light emitting diode LED structure. Different from the traditional distributed Bragg reflector DBR, the thickness of each membrane for constituting TDBR is not always equal to one fourth of the predetermined wavelength, but is gotten by a certain optimum method according to the predetermined reflectivity effect. Comparing with the traditional DBR, the full angle reflectivity of the TDBR which has been optimized is greatly improved; various reflection effects can be realized according to application. The TDBR is inserted between an active luminescent layer and a substrate to be able to reflect the light emitted by the active luminescent layer to the substrate thereby enhancing the light extraction efficiency of the LED.

Description

1. Technical field [0001] The present invention relates to a novel tuned distribution Bragg reflector (Tuned Distributed BraggReflectors, TDBR) and its design idea; relates to a novel light-emitting diode (LED) structure based on TDBR; (MBE) and other thin film epitaxial growth techniques to grow TDBR and apply it to LED methods. 2. Technical background [0002] LED is one of the most widely used optoelectronic devices at present. The emergence of GaN-based blue LEDs in the 1990s has greatly promoted the development and application of LEDs. LED has been widely used in vehicle lighting, indication, backlight, landscape lighting, decorative lights and traditional display fields. LED white light lighting is of great significance in terms of energy saving, and has been included in the medium and long-term scientific and technological development plans of various countries. It is estimated that the average annual compound growth rate of white LEDs from 2004 to 2010 will be as ...

Claims

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Application Information

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IPC IPC(8): H01L33/00H01S5/00H01L33/10
Inventor 冯玉春施炜郭宝平彭冬生牛憨笨
Owner SHENZHEN UNIV
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