Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Positive photosensitive resist release agent compositions

A photoresist and stripper technology, applied in the processing of photosensitive materials, etc., can solve the problems of unsatisfactory stripping performance, large resist damage, harsh etching conditions, etc., to achieve excellent solubility and stripping, low temperature Excellent peeling performance and favorable working environment

Inactive Publication Date: 2007-08-15
DONGJIN SEMICHEM CO LTD
View PDF0 Cites 13 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Various stripper compositions have been developed to improve operability, safety, corrosivity to substrates, and stripping properties of deteriorated films formed by etching, but their stripping properties are not satisfactory.
[0005] And, recently, as the processing pattern (patten) tends to be finer, the etching conditions of metal and oxide film are becoming more and more severe, so the damage to the resist is also increasing, and the resist is deteriorated.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Positive photosensitive resist release agent compositions
  • Positive photosensitive resist release agent compositions
  • Positive photosensitive resist release agent compositions

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1-18 and comparative example 1-10

[0065] According to the ratio described in Table 1 below, the organic amines, organic solvents and polar solvents were formulated to prepare the stripping solution. According to the content of the polar solvent, each release agent was evaluated in terms of peelability, corrosion and evaporation loss, and the evaluation results are shown in Table 2 below.

[0066] [Table 1]

[0067] Composition of stripping agent (wt%)

[0068] Example 7

[0069] In Table 1, A: organic amine, B: diethylene glycol monoalkyl ether, C: aprotic polar solvent, D: nonionic surfactant, wherein, examples 1-5 are polyoxypropylene glycol ethers , Examples 6-10 are polyoxypropylene ethyl ethers, examples 11-14 are polyoxyethylene polypropylene glycol ethers, and examples 15-18 are polyoxyethylene polypropylene glycol ethers.

[0070] MEA: Monoethanolamine (Monoethanolamine);

[0071] DEA: diethanolamine (diethanolamine);

[0072] TEA: Triethanolamine (Triethanolamine);

[0073]BD...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

This invention discloses one positive light anti-erosion agent peeling agent combination, which comprises the following parts: a, occupying organic amine for weight of 10 to 50; b, monoethylene glycol monoalkyl ether for weigth of 0 to 70 percent; c, non photon electrode solvent for weight of 20 to 90; d, based on the said three component total weight for 0.01 to 10 non-ion surface active agent. This invention relates to positive light anti-erosion peel agent combination to etch process with excellent solve property and peeling property of pattern film for light resistance.

Description

technical field [0001] The present invention relates to a positive-type photoresist stripper composition which has excellent solubility and stripping properties for a photoresist pattern film degraded by etching treatment etc., and which is used for cleaning after being mixed with water In the case of rinse, the corrosion to the aluminum or copper substrate is small and the evaporation is small, so it is not only beneficial to the working environment, but also has high safety, and can be cleaned with water, especially the low-temperature peeling performance is excellent, so it has a high practicality. Background technique [0002] Generally, semiconductor devices (Device) such as transistors, integrated circuits (ICs), large scale integrations (LSIs), and very large scale integrations (VLSIs), and liquid crystal display devices are prepared by photolithography. For example, in a semiconductor device, a photoresist film is formed on an inorganic substrate such as a silicon ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G03F7/42
Inventor 尹锡壹金圣培郑宗铉朴熙珍辛成健张锡唱金玮溶许舜范金柄郁
Owner DONGJIN SEMICHEM CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com