Method for altering mechanical and optical performance of thin film
A technology of optical properties and thin films, which is applied in the fields of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of large-scale manufacturing of difficult devices, complex thin-film structures and manufacturing processes, and high production costs, so as to achieve easy control and change the physical Performance, the effect is obvious
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[0024] The present invention will be further described below in conjunction with the accompanying drawings and embodiments.
[0025] The guiding principle of the present invention is that in the composite double-layer film structure, the compressive stress of the lower amorphous silicon dioxide transition layer 2 is used to suppress the tensile stress of the surface layer amorphous silicon nitride film 3 to prepare a low-stress composite film, such as figure 1 shown. The preparation examples of the present invention are as follows: 1. select silicon wafers as the substrate 1 for thin film growth, first process with Piranha solution and clean with deionized water, then soak with dilute hydrofluoric acid solution, dry with nitrogen, and put Into the plasma enhanced (PECVD) system, vacuum; ② on the surface of the silicon substrate, with SiH 4 and N 2 0 as the reaction gas, use PECVD to grow an amorphous silicon dioxide transition layer 2 with a thickness of 50-1500nm at 300°C; ...
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