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Method for preparing magnetron sputtering hemisphere film

A magnetron sputtering and hemispherical surface technology, which is applied in sputtering plating, ion implantation plating, metal material coating technology, etc., can solve the problem of difficulty in forming a uniform film, complex mechanical structure and flexible movement of the rotating heating table To achieve the effect of stable coating process, easy control of deposition process, and convenient clamping

Inactive Publication Date: 2009-04-22
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The present invention aims to solve the problem that the size of the target material used in the existing thin films is relatively large, so for the hemispherical thin film, the property of the coating film is uneven due to the change of the target base distance; and because the larger the size of the target material, the utilization rate of the target material is often lower. , resulting in great waste; in addition, in the existing device for coating a hemispherical film, the magnetron target is fixed, and the heating table swings while the heating table rotates. The mechanical structure is complex, the flexibility of movement is poor, and it is difficult to form a uniform film. The present invention provides a method for preparing a hemispherical film by magnetron sputtering. The specific technical solution is implemented by the following steps:

Method used

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  • Method for preparing magnetron sputtering hemisphere film
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specific Embodiment approach 1

[0012] Specific implementation mode one: the method of this embodiment mode adopts following steps:

[0013] Step 1. Select Si (silicon) as the substrate, use Ge (germanium) material as the film target material, and place the substrate material on a rotating heating table, which is located in a vacuum chamber;

[0014] Step 2. Seal the vacuum chamber and start the vacuum acquisition system. When the vacuum degree in the vacuum chamber reaches 1.0×10 -4 ~9.9×10 -4 When the pressure is Pa, Ar gas is introduced. When the pressure is 3 to 5 Pa, the ionization power supply is started, and the surface of the Si substrate is ionized and cleaned for 3 to 5 minutes;

[0015] Step 3. After the ionization cleaning is completed, start the heating lamp group, heat to the temperature required for the deposition of the film, heat the temperature to 25-750 ° C, and keep it at the above temperature for 10 minutes to 1 hour;

[0016] Step 4. Introduce the ignition gas into the vacuum chamber....

specific Embodiment approach 2

[0019] Embodiment 2: The difference between this embodiment and Embodiment 1 is that in step 1, a Φ164mm Si hemisphere is used, and the thickness of the film prepared on the hemisphere is 90nm. Ge material is used as the film target material, and the target diameter is 49mm. , the thickness is 3mm; step 2 when the vacuum degree in the vacuum chamber reaches 4.6×10 -4 Pa, when the pressure in the vacuum chamber is 3 Pa, ionize and clean for 5 minutes; Step 3 Coating at room temperature, the Ar gas flow rate is set to 60 sccm, and at the same time close the gate valve, when the pressure in the vacuum chamber is 3 Pa, turn on the RF power Start the glow, set the power to 50 watts; step 4, after pre-sputtering for 5 minutes, adjust the pressure of the vacuum chamber to 0.6 Pa; step 5, set the control parameters to 1.0, 1.0, 2.3, 4.5, 5.2, 8.4 to control the rotation of the heating table After the number of revolutions and the position of the target, remove the baffle and start coa...

specific Embodiment approach 3

[0021] Specific embodiment 3: The difference between this embodiment and specific embodiment 1 is that in step 1, a Φ300mm Si hemispherical surface is used, the thickness of the film prepared on the hemispherical surface is 280nm, and Ge material is used as the film layer target material, and the target material diameter is 49mm , the thickness is 3mm; step 2 when the vacuum degree in the vacuum chamber reaches 2.0×10 -4 Pa, when the pressure in the vacuum chamber is 4 Pa, ionize and clean for 4 minutes; step 3, start the heating lamp group to heat to 200 degrees, keep warm for 30 minutes, set the Ar gas flow to 40 sccm, and close the gate valve at the same time, wait until the pressure of the vacuum chamber When it is 5 Pa, turn on the RF power supply and set the power to 150 watts; after 3 minutes of pre-sputtering in step 4, adjust the pressure of the vacuum chamber to 0.8 Pa; in step 5, set the control parameters to 1.0, 2.0, 2.6, 2.5, 3.0 , 8.0 to control the number of re...

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Abstract

A process to prepare semi-spherical film by magnet sputter deposition is carried out by: (1) selecting target, and potting substrate in a rotary heating table; (2) vacuuming the heating table in a cabin, passing Ar gas, and ionization cleaning; (3) heating to the working temperature of deposition and keeping the temperature; (4) passing ignition gas, providing sputter power, controlling gas fluid volume, providing negative bias-voltage, shifting off buffer to begin deposition onto substrate; (5) controlling tracks of the two step motors rotating the heating table and the target respectively; and (6) cooling to atmosphere. It can produce spherical film with uniform thickness and no special device clamping work-piece is needed. Its target different from the prior apparatus is oscillated while the heating table is rotating so as to have high utilization rate of the target material.

Description

technical field [0001] The invention relates to a preparation method of a hemispherical thin film. Background technique [0002] Most of the magnetron sputtering thin film preparation devices in the existing thin film preparation technology are coated on the plane, and a few are coated on the curved surface or the inner surface of the hemisphere, while there are few coatings on the outer surface of the hemisphere, and the existing There are deficiencies in the coating device on the outer surface of the hemisphere, which are specifically reflected in: for the coating on the outer surface of the hemisphere with a large diameter, the target material generally needs to be made very large. The larger the target material size, the lower the utilization rate, which results in a huge target material. The problem of waste; because the properties of the film prepared by magnetron sputtering are closely related to the distance between the target and the base. The properties of the fil...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35C23C14/54
Inventor 朱嘉琦韩潇姜春竹韩杰才
Owner HARBIN INST OF TECH
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