Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for manufacturing semiconductor device

A semiconductor and device technology, applied in the field of semiconductor equipment, can solve the problem of serious damage to TFT, and achieve the effect of reliable semiconductor equipment and preventing damage

Inactive Publication Date: 2009-04-01
SEMICON ENERGY LAB CO LTD
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Thus, the damage to the TFT will be more serious in the TFT with a minute structure

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for manufacturing semiconductor device
  • Method for manufacturing semiconductor device
  • Method for manufacturing semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach

[0073] Embodiments of the present invention will be described below with reference to the accompanying drawings. However, it is easily understood by those skilled in the art that the present invention can be employed in many ways and obviously has various changes and modifications unless such changes and modifications depart from the purpose and scope of the present invention. Therefore, interpretation of the present invention is not limited to the description of the present embodiment.

[0074] Refer to the attached Figures 1A to 1D , Figures 2A to 2C and image 3 A manufacturing process of the semiconductor device according to the present embodiment is described.

[0075] First, thin film transistors (TFTs) are fabricated. A base film 102, a semiconductor layer 103 as an active layer, a gate insulating film 104, and a gate electrode 105 are formed on a substrate 101 ( Figure 1A ).

[0076] A substrate having an insulating film formed on its surface such as a glass su...

Embodiment 1

[0110] In this embodiment, a TFT in which a contact hole is formed with a metal cap film and a TFT in which a contact hole is not formed with a metal cap film are compared in terms of transistor characteristics, see FIGS. 4A and 4B, Figures 5 to 8 , and Figures 29A and 29B.

[0111] Fig. 29A shows gate voltage and drain current characteristics of an n-channel TFT fabricated without forming a metal cap film. FIG. 4A shows gate voltage and drain current characteristics of an n-channel TFT fabricated when a metal cap film is formed.

[0112] In FIGS. 4A and 29A , the horizontal axis represents the gate voltage (VG[V]), and the vertical axis represents the drain current (ID[A]).

[0113] In FIGS. 4A and 29A, the channel length (L) and channel width (W) of the n-channel TFT are 3 μm and 2 μm, respectively, and the thickness of the gate insulating film (referred to as “Tox” in this specification) is 55 nm.

[0114] In FIG. 4A and FIG. 29A, the TFT characteristics before the conta...

Embodiment 2

[0145] This embodiment describes a method for manufacturing an active-matrix liquid crystal display in which reverse-staggered TFTs are used as switching elements. In addition, cross-sectional views of the manufacturing process are shown in FIGS. 9A to 9E, respectively, and Figure 10 Represents a top view.

[0146] First, a bottom insulating film 611 is formed on a substrate 610 . It is preferable to use an insulating film such as a silicon oxide film, a silicon nitride film, or a nitrogen-containing silicon oxide film (SiO x N y ) as the bottom insulating film 611. In addition to the non-alkaline glass substrate, a heat-resistant plastic substrate capable of withstanding the processing temperature in the manufacturing process can also be used as the substrate 610 . In a reflective liquid crystal display, a semiconductor substrate such as single crystal silicon, a metal substrate such as stainless steel, or a ceramic substrate with an insulating layer on its surface may a...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The present invention provides a method for manufacturing a semiconductor device having high characteristic and reliability. The etching damage during dry etching after forming an electrode or a wiring over an insulating film is prevented. The damage is suppressed by forming a conductive layer so that charged particles due to plasma during dry etching are not generated in a semiconductor layer. Accordingly, it is an object of the invention to provide a method not for generating the deterioration of the transistor characteristic especially in a thin film transistor having a minute structure.

Description

technical field [0001] The present invention relates to a semiconductor device including a circuit including a thin film transistor (hereinafter referred to as TFT), and a method for manufacturing the semiconductor device. For example, the present invention relates to electro-optic devices typified by liquid crystal display panels, EL (Electroluminescence) displays, EC displays, and the like. Furthermore, the present invention relates to an electrical device, for example, a central processing unit (CPU), constituted of TFTs for increasing processing speed, and a method for manufacturing the electrical device. In addition, the present invention relates to an electric device having these electro-optical devices and electric devices as components. Background technique [0002] In recent years, thin film transistors (TFTs) have been fabricated using semiconductor films formed on substrates having insulating surfaces, and semiconductor devices having large integrated circuits co...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/00G02F1/1368G09G3/36G09G3/38
Inventor 山口哲司浅野悦子矢崎尚美二村智哉西川智子
Owner SEMICON ENERGY LAB CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com