CaTiO3 structure La-Mn oxide/zinc oxide heterogeneous p-n junction and its making method
A technology of perovskite structure and manganese oxide, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of lack of large-scale production capacity and high production cost
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[0019] Using Si(100) single crystal substrate as the substrate, the perovskite structure Lanthanum manganese oxide / ZnO heterogeneous p-n junction was prepared by using ZnO and LSMO ceramic targets respectively. The specific process steps are:
[0020] 1. Prepare a 300nm-thick Pt bottom electrode on the substrate, and vacuum anneal at 500°C for 30min;
[0021] 2. Deposit a 300nm-thick ZnO film on the Pt lower electrode, and the process conditions are: substrate temperature 600°C, working pressure 0.1Pa, oxygen partial pressure 5%;
[0022] 3. After covering part of the ZnO film with a mask, deposit a 150nm LSMO film, the process conditions: substrate temperature 800°C, working pressure 0.5Pa, oxygen partial pressure 20%;
[0023] 4. Ag electrodes were deposited on the ZnO and LSMO thin films at a substrate temperature of 100 °C, respectively.
[0024] According to the above preparation conditions, different sputtering powers were used respectively (see Table 1).
[0025] Tab...
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