Plasma processing system

Abstract

A plasma processing system comprising a processing chamber (10), first and second electrode units (5, 11) provided in the processing chamber (10) and arranged opposite to each other, and a quartz plate (13) provided on the second electrode unit (11) side of the first electrode unit (5) for protecting the first electrode part (5). The plasma processing system plasma-processes an article to be processed which is provided on the first electrode unit (5) side of the second electrode unit (11) by generating plasma between the first electrode unit (5) and the second electrode unit (11) and exciting a reaction gas in the processing chamber (10). The quartz plate (13) has a roughened surface on the second electrode unit (11) side.

Description

technical field [0001] The invention relates to a plasma processing device. Background technique [0002] In the manufacturing process of electronic devices such as liquid crystal displays and semiconductor devices, dry etching technology is widely used as a method for forming microfabricated patterns. [0003] In this dry etching technique, it is required to perform etching at a high aspect ratio, high etching rate, and high selectivity with high uniformity, and to suppress the generation of particles (fine particle pollutants). [0004] The aspect ratio is a ratio of a depth to a width of a pattern formed on a substrate by etching. The selectivity ratio is the ratio of the etching rate of the material to be etched, the etching rate of the etching mask material, and the etching rate of the substrate material. [0005] For example, in the case where the etching uniformity is low, in the pattern formed on the substrate by etching, over-etching and under-etching occur due to...

AI Technical Summary

Problems solved by technology

[0009] In a dry etching device with a structure in which electromagnetic waves are introduced through a quartz member, since reaction products adhere to the surface of the quartz member, there is a possibility that particles in the processing chamber may be polluted by the falling reaction products.

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