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Open-pipe zinc dispersing method

A diffusion method, zinc powder technology, applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the troublesome process of vacuuming, sealing and opening tubes, is not suitable for mass continuous production, cannot be completely sealed, etc. problems, to achieve the effect of short production cycle, simple heat treatment equipment and easy operation

Inactive Publication Date: 2008-05-21
XIAMEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Closed-tube diffusion (Young-Don Ko, et al, Microelectronics Journal, Neural network based modeling of di fusion process for high-speed avalanche photodiodes fabrication, 2002, 33: 675-680) needs to be carried out in a vacuumed quartz tube, vacuumized, The process of sealing and opening the tube is cumbersome, the cost is relatively expensive, and the diffusion time is long, so it is not suitable for continuous production in large quantities
Box method diffusion (Zhang Fujia, Li Siyuan, Hu Jianzhi, ZnP 2 Diffusion in the steady state box method on the surface of GaP, Luminescence and Display, 1984, 5, (3): 83-85) needs to place the semiconductor epitaxial wafer and the impurity source in a special quartz boat, and the design of the quartz boat needs to meet certain requirements. Sealing, but not completely sealed, it needs to be carried out in a hydrogen and nitrogen flow atmosphere, certain measures must be taken for hydrogen emission and use safety, and the required equipment is more complicated

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] Grind 0.4g of zinc powder (the particle size of the zinc powder is like fine flour, with a purity of more than 99.99%), mix it into 0.4g of organic silica gel, and stir evenly to obtain a diffusion source. Coat a layer of diffusion source on a gallium arsenide sheet of any size, size, and shape, and use an old-fashioned gluing machine to spread the glue. The transformer can be adjusted from 0 to 50V, and the glue spreading time is about 45s, so that the zinc-containing organic silica gel is relatively Evenly distributed on the gallium arsenide sample with a thickness of 0.4mm, coated with organic silica gel on the sample after uniform glue, the thickness of the organic silica gel layer is 0.6mm, and then put it in a drying oven to dry until the glue is naturally solidified, then bake The drying temperature is 120°C. Diffusion is carried out in a rapid thermal annealing furnace with zinc-containing organic silica gel as the diffusion impurity source, nitrogen is used as ...

Embodiment 2

[0037] Similar to Example 1, the difference is that 0.4 g of zinc powder is ground and then mixed into 0.6 g of organic silica gel. Make the zinc-containing organic silica gel evenly distributed on the gallium arsenide sample with a thickness of 0.1mm, and coat the organic silica gel on the sample after uniform glue, the thickness of the organic silica gel layer is 0.1mm, and then put it in a drying oven to dry Dry until the glue solidifies naturally, and the drying temperature is 90°C.

[0038] Diffusion is carried out in a rapid thermal annealing furnace with zinc-containing organic silica gel as the diffusion impurity source, nitrogen is used as the protective gas, and the gas flow rate is 5ml / m 3 , for diffusion, the diffusion temperature is 550-580°C, and the diffusion time is 10-15min;

[0039] Wipe off surface coating with cotton dampened with acetone, then use HF:H 2 O=1:3 solution to remove the still adhered silicone layer.

Embodiment 3

[0041] Similar to Example 2, the difference is that 0.4 g of zinc powder is ground and then mixed into 0.8 g of organic silica gel. Make the zinc-containing organic silica gel evenly distributed on the gallium arsenide sample with a thickness of 0.6mm, and coat the organic silica gel on the sample after uniform glue, the thickness of the organic silica gel layer is 1mm, and then put it in a drying oven for drying Until the glue solidifies naturally, the drying temperature is 100°C.

[0042] Diffusion is carried out in a rapid thermal annealing furnace with zinc-containing organic silica gel as the diffusion impurity source, nitrogen is used as the protective gas, and the gas flow rate is 4ml / m 3 , for diffusion, the diffusion temperature is 600-620°C, and the diffusion time is 25-35min;

[0043] Wipe off surface coating with cotton dampened with acetone, then use HF:H 2 O=1:5 solution to remove the still adhered silicone layer.

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Abstract

The method of open tube diffusion of zinc into epitaxial semiconductor wafer composed of GaAs compound under nitrogen atmosphere includes following steps: zinc powder is doped into organic silicon gel to get the organic silicon gel containing zinc; the silicon gel containing zinc is coated on the semiconductor wafer as diffusion source; after evening the gel, the organic silicon is coated on the sample wafer, and then is dried; diffusion is made under the protection of inert gas, and diffusion temperature is 550~620 DEG C; removing the face coat and the organic gel layer to get the end product.

Description

technical field [0001] The invention relates to a compound semiconductor epitaxial wafer diffusion method, in particular to a kind of zinc (Zn) type metal doped in organic silica gel as a diffusion source, and the Zn type impurity is diffused into the arsenic compound in an open tube nitrogen atmosphere. A method in gallium (GaAs) compound semiconductor epitaxial wafers. Background technique [0002] At present, there are two methods of forming p-n junctions for III-V semiconductor compounds: closed-tube diffusion and open-tube diffusion. Closed-tube diffusion (Young-Don Ko, et al, Microelectronics Journal, Neural network based modeling of di fusion process for high-speed avalanche photodiodes fabrication, 2002, 33: 675-680) needs to be carried out in a vacuumed quartz tube, vacuumized, The process of sealing and opening tubes is cumbersome, expensive, and takes a long time to spread, so it is not suitable for continuous production in large quantities. Box method diffusion...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/225
Inventor 肖雪芳谢生陈朝陈良惠
Owner XIAMEN UNIV
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