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In situ getter pump system and method

A technology for processing wafers and on-site pumps, applied to pumps, electrical components, liquid variable capacity machinery, etc., can solve the problems of increased process costs, frequent regeneration, high argon price, etc., reduce transition time, increase productivity and profit Efficiency and reduced downtime

Inactive Publication Date: 2008-01-23
SAES PURE GAS
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This has two undesired side effects
First, due to the high price of argon, the cost of the process increases dramatically
Second, the large volume of argon pumped by the cryopump will quickly saturate this pump, requiring frequent regenerations (trapped material is removed from the pump), and thus causing more downtime to the system
However, the prior art does not disclose the use of an in situ aspirator operating at several temperatures to preferably draw samples of several gases

Method used

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  • In situ getter pump system and method
  • In situ getter pump system and method
  • In situ getter pump system and method

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Embodiment Construction

[0040] The wafer processing system 10 of FIG. 1 includes a first housing 12 enclosing a remote wafer robot 14 and a second housing 16 defining a processing chamber 18 . The system 10 also includes a mechanical pump 20, a cryopump 22, a gas delivery system 24, a plasma generator 26 for generating a plasma, and a microprocessor-based controller 28 for controlling the many operations of the wafer processing system 10 . The present invention also includes an in situ getter system pump 30 comprising a getter miniature assembly 32, a baffle 33, a controllable power supply 34, a residual gas analyzer (RGA) 36 and a microprocessor based The controller 38. The wafer processing system 10 processes a semiconductor wafer 40 placed in a processing chamber 18 using a remote-controlled wafer robot 14 .

[0041] The fabrication details of the first housing 12 and the manipulator 14 for remote control of the wafer are well known to those skilled in the art. Housing 12 defines a manipulator ...

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Abstract

A getter pump module includes a number of getter disks provided with axial holes, and a heating element which extends through the holes to support and heat the getter disks. The getter disks are preferably solid, porous, sintered getter disks that are provided with a titanium hub that engages the heating element. A thermally isolating shield is provided to shield the getter disks from heat sources and heat sinks within the chamber, and to aid in the rapid regeneration of the getter disks. In certain embodiments of the present invention the heat shields are fixed, and in other embodiments the heat shield is movable. In one embodiment, a focus shield is provided to reflect thermal energy to the getter material from an external heater element and provide high pumping speeds. An embodiment of the present invention also provides for a rotating getter element to enhance getter material utilization.

Description

technical field [0001] The present invention relates generally to ultra-high vacuum systems, and more particularly to in situ getter pumps for use in ultra-high vacuum systems. Background technique [0002] There are many needs such as 10 -7 to 10 -12 Torr (Torr) ultra-high vacuum energy level process. For example, high vacuum physics devices like cyclotrons and linear accelerators often require 10 -8 -10 -12 Torr level vacuum. Also, in the semiconductor manufacturing industry, about 10 -7 -10 -9 Torr ultra-high vacuum. [0003] Typically several pumps are used in series or in parallel to obtain ultra-high vacuum levels in the chamber. Mechanical (eg oil) pumps are often used to reduce the chamber pressure to approximately 30-50 mTorr. These are often referred to as "high pressure" pumps because they only pump gas at relatively high pressure. High or ultra-high vacuum pumping systems, such as molecular pumps, ion pumps, cryopumps, turbo pumps, etc., are used to red...

Claims

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Application Information

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IPC IPC(8): C23C14/34F04B37/02H01L21/00C23C14/54C23C14/56F04B37/08F04B37/16H01L21/02H01L21/20
CPCF04B37/08F04B37/02C23C14/56C23C14/54C23C14/564C23C14/544C23C14/541
Inventor D·H·罗列马G·P·克鲁格
Owner SAES PURE GAS
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