Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Semiconductor integrated circuit arrangement fabrication method

a technology of integrated circuit and fabrication method, which is applied in the direction of electrical equipment, decorative surface effects, decorative arts, etc., can solve the problems of large increase in the cost of the etching system, inability to obtain electrons with uniform energy necessary for realizing the control in plasma, and difficulty in achieving the control by a conventional etching method. , to achieve the effect of maximizing the selection ratio

Inactive Publication Date: 2007-10-23
RENESAS ELECTRONICS CORP
View PDF52 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0011]In the case of an electronic device with a high integration level, it is possible to open a contact hole with a diameter of 0.5 μm or less and a high aspect ratio (hole depth / hole diameter) , and moreover etching with a high accuracy and a high selection ratio is necessary, while minimizing the etching amount of a base silicon film, silicon nitride film, or a multilayer film made of these films.
[0053]To improve the selection ratio, it is necessary to remove non-selective dissociated species. Moreover, to keep the etching shape accuracy, it is necessary to use dissociated species having a selectivity and an adhesive property. From the properties in Table 2, it will be understood that the dissociated species in the row of non-selectivity are preferable. The etching rate can be obtained by ordinary system control such as controlling the introduced amount of reaction gases, mixing ratio of the reaction gases, and the power.

Problems solved by technology

However, it is difficult to realize this control by a conventional etching method using dissociation of reaction gas molecules caused by collision of electrons in a plasma.
This is because selective excitation by electrons can be realized only on antibonding orbitals of the minimum energy, but electrons with uniform energy necessary for realizing it cannot be obtained in a plasma.
In this case, however, the cost of the etching system greatly increases.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor integrated circuit arrangement fabrication method
  • Semiconductor integrated circuit arrangement fabrication method
  • Semiconductor integrated circuit arrangement fabrication method

Examples

Experimental program
Comparison scheme
Effect test

embodiment 1

[0075][Embodiment 1]

[0076]FIG. 1 is a schematic view of a microwave plasma etching system 100 used in this embodiment. The system 100 includes a microwave guide 101, magnets 102a and 102b, a plasma generation change 103, and a a reaction chamber 106. Microwaves of 2.45 GHz generated by a magnetron are introduced into the plasma generation chamber 103 through the microwave guide 101. Moreover, a material gas G is introduced into the plasma generation chamber 103 through a gas introduction port 104.

[0077]By introducing microwaves into the plasma generation chamber 103 and generation a magnetic field of approx. 1 KG by the magnets 102a and 102b, the material gas G is transformed into a plasma by electron cyclotron resonance at an ECR position 105 with a flux density of approx. 875 G.

[0078]In this case, neutral dissociated species and ionic dissociated species generated from the material gas G are transferred to the surface of a semiconductor substrate (wafer) 1 in the reaction chamber ...

embodiment 2

[0094][Embodiment 2]

[0095]FIG. 7 is a schematic view of a plasma etching system 200 used in this embodiment. The plasma etching system 200 is provided with an antenna 202 around a quartz cylinder 201 so as to introduce electromagnetic waves into the cylinder 201 by applying a radio frequency to the antenna 202. Double coils 204 and 205 are provided to the outside of a vacuum chamber 203 so as to generate a magnetic field in the axial direction. A material gas G introduced through a gas introduction port 206 is transformed into a plasma by the axis-directional magnetic field and the radio frequency, and neutral dissociated species and ionic species generated during this time are transferred to the surface of the semiconductor substrate 1 where etching is performed.

[0096]Embodiment 1 uses the photoresist pattern 10 as a mask for etching the BPSG film 9. In this case, however, the products produced when photoresist is etched have an influence on the selectivity that must be considered....

embodiment 3

[0107][Embodiment 3]

[0108]FIG. 13 is a schematic view of a microwave plasma etching system 300 used in this embodiment. The system 300 includes a microwave guide 301, a magnet 302, and a plasma generation chamber303. Microwaves of 24.5 GHz generated by a magnetron are introduced into the plasma generation chamber 303 through the microwave guide 301.

[0109]A plasma of an inert gas introduced through a gas introduction port 304 is generated in the plasma generation chamber 303.

[0110]A plurality of grid electrodes 306 are provided along the boundary between the plasma generation chamber 303 and a reaction chamber 305 and only ions (i.e., not electrons) the plasma are introduced into the reaction chamber 305 by alternately changing the potentials of the grid electrodes 306 to positive and negative states. Metastable atoms of the inert gas is introduced into the reaction chamber 305 while diffusing isotropically because they are not influenced by an electric field.

[0111]A reaction gas is ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Fractionaaaaaaaaaa
Fractionaaaaaaaaaa
Lengthaaaaaaaaaa
Login to View More

Abstract

To realize etching with a high selection ratio and a high accuracy in fabrication of an LSI, the composition of dissociated species of a reaction gas is accurately controlled when dry-etching a thin film on a semiconductor substrate by causing an inert gas excited to a metastable state in a plasma and a flon gas to interact with each other and selectively obtaining desired dissociated species.

Description

[0001]This is a continuation application of U.S. Ser. No. 09 / 188,371, filed Nov. 10, 1998, now U.S. Pat. No. 5,962,347; which is a continuation application of U.S. Ser. No. 08 / 857,167, filed May 15, 1997, now U.S. Pat. No. 5,874,013; which is a File Wrapper Continuation of U.S. Ser. No. 08 / 472,459, filed Jun. 7, 1995, now abandoned.BACKGROUND OF THE INVENTION[0002]The present invention relates to the art of semiconductor integrated circuit arrangement fabrication, and particularly to an art for dry-etching a thin film on a semiconductor wafer by using radicals or ions in a plasma.[0003]A silicon oxide film which is a typical insulating film used to fabricate an LSI is normally processed by a dry-etching system (plasma etching system) using a plasma process.[0004]In the case of an etching process using a typical magneto-microwave plasma etching system, a vacuum chamber of the etching system comprising a reaction chamber (etching chamber) and a discharge chamber is first evacuated up ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/00H01L21/311H01L21/768
CPCH01L21/31116H01L21/76802
Inventor TOKUNAGA, TAKAFUMIOKUDAIRA, SADAYUKIMIZUTANI, TATSUMITAGO, KAZUTAMIKAZUMI, HIDEYUKIYOSHIOKA, KEN
Owner RENESAS ELECTRONICS CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com