Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Inorganic polysilazane resin

a technology of organic polysilazane and resin, which is applied in the direction of silicon compounds, transportation and packaging, liquid/solution decomposition chemical coatings, etc., to achieve the effect of small residual stress and small shrinkag

Inactive Publication Date: 2015-01-01
AZ ELECTRONICS MATERIALS LUXEMBOURG R L
View PDF2 Cites 21 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The inorganic polysilazane resin in this patent has a high amount of silicon, which makes it better than traditional resins when creating siliceous films. These films have higher density, reduced shrinking, and lower residual stress, which helps to prevent cracking and crystal defects in electronic devices. This makes it ideal for use in insulation, passivation, protective, and planarization films.

Problems solved by technology

When the shrinkage or residual stress of the film is large, there occur problems like that cracks and a crystal defect of the substrate.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Inorganic polysilazane resin
  • Inorganic polysilazane resin
  • Inorganic polysilazane resin

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0071]Three moles (303 g) of dichlorosilane having a purity of 99% or more were injected into a mixed solvent consisting of 1 kg of dehydrated pyridine and 3 kg of dibutyl ether at −30° C. under stirring. While maintaining the temperature of the solution at −30° C., 2 moles (34 g) of ammonia gas having a purity of 99.9% or more were injected into the mixture under stirring. The mixture was reacted for 2 hours while maintaining the temperature at −30° C. to obtain a solution of silazane oligomer containing unreacted Si—Cl. The existence of the unreacted Si—Cl was confirmed by using FTIR, VIR-9450 manufactured by JASCO Corporation.

[0072]The oligomer obtained contains following compounds and the like, and the total number of NH and the total number of Cl in the oligomer are the same.

[0073]In the oligomer formation process, HCl was generated but most of it was reacted immediately with excessive pyridine to form pyridine hydrochloride and the pyridine hydrochloride formed was precipitate...

example 2

[0075]A silazane oligomer solution containing unreacted Si—Cl was prepared by the same process as Example 1. To the silazane oligomer solution obtained, 2 moles (204 g) of N,N,N′,N′-tetramethyldiaminomethane were added and this reaction system was heated gradually to 80° C. under stirring and held at this temperature for one hour, followed by cooling down gradually to the room temperature. Subsequently, 1 mole (17 g) of ammonia gas having a purity of 99.9% was injected again to the mixture under stirring and then the mixture was allowed to stand for 30 minutes. The obtained slurry reaction mixture was filtered with a glass filter to remove pyridine hydrochloride to obtain a filtrate. To the filtrate obtained, dibutyl ether was added and then heated to 50° C., followed by distillation under the reduced pressure of 20 mmHg to remove pyridine at this temperature. Through these processes, Solution B having a concentration of 20% by weight, which contains a resin (Resin B) having a weigh...

example 3

[0076]Three moles (303 g) of dichlorosilane having a purity of 99% or more were injected into a mixed solvent consisting of 300 g of dehydrated pyridine and 3 kg of dibutyl ether under stirring at 0° C. While maintaining the temperature of the solution at 0° C., 3 moles (51 g) of ammonia gas were injected into the mixture under stirring. The mixture was reacted for 2 hours under stirring while maintaining the temperature at 0° C. to obtain a solution of polysilazane polymer. It was confirmed by FTIR, VIR-9450 manufactured by JASCO Corporation that the polymer does not contain the unreacted Si—Cl. The molecular weight of the polymer was 2,300. Pyridine hydrochloride and ammonium chloride, which were formed in the synthesis process of the polysilazane polymer, were removed by filtration with a centrifugal separation filter.

[0077]Subsequently, 1 mole (107 g) of 2,6-lutidine was added to the filtrate and then the reaction system was heated gradually to 90° C., followed by injecting 1 mo...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Shrinkageaaaaaaaaaa
Molecular weightaaaaaaaaaa
Ratioaaaaaaaaaa
Login to View More

Abstract

An inorganic polysilazane resin of the present invention has a Si / N ratio (i.e. a ratio of contained silicon atoms to contained nitrogen atoms) of 1.30 or more. The inorganic polysilazane resin having such a high Si content can be produced by, for example, a method in which an inorganic polysilazane compound containing both Si—NH and Si—Cl is heated to react NH with Cl, a method in which a silazane oligomer (polymer) that leaves no Si—Cl bond is synthesized and a dihalosilane is added to the synthesized silazane oligomer (polymer) to perform a thermal reaction, and the like. A siliceous film can be formed by, for example, applying a coating composition containing the inorganic polysilazane resin onto a base plate and then dried and the dried product is then oxidized by bringing the dried product into contact with water vapor or hydrogen peroxide vapor and water vapor under heated conditions.

Description

FIELD OF THE INVENTION[0001]The present invention relates to an inorganic polysilazane resin, more specifically, to an inorganic polysilazane resin which can be suitably used for forming an insulation film, a passivation film, a planarization film, a protective film, a hard mask, a stress adjusting film, a sacrifice film, and the like of electronic devices such as a semiconductor element, etc. The present invention also relates to a coating composition containing the inorganic polysilazane resin, a method for forming a siliceous film by use of the inorganic polysilazane resin, and a siliceous film formed by the method.BACKGROUND ART[0002]A polysilazane is well known as a compound useful for a precursor of silicon nitride (for example, see Patent literature 1 below). In recent years, it has also attracted attention as a material for forming an insulation film such as an interlayer insulation film, a passivation film, a protective film, a planarization film, and the like of the electr...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C01B33/08C09D1/00
CPCC09D1/00C01B33/08C23C18/122C01B21/087H01L21/0217C23C18/1225H01L21/02326C23C18/1212Y10T428/31663H01L21/02282H01L21/02222H01L21/02164C08G77/62C09D183/16C01B33/126C08L83/16H01L21/02323H01L21/02337H01L31/02167Y02E10/50
Inventor FUJIWARA, TAKASHIGROTTENMUELLER, RALPHKANDA, TAKASHINAGAHARA, TATSURO
Owner AZ ELECTRONICS MATERIALS LUXEMBOURG R L
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com