Substrate processing apparatus, substrate processing method, and nozzle

Abstract

A substrate processing apparatus includes a substrate holding unit that holds a substrate, an injection unit that injects droplets of a processing liquid from a plurality of injection ports respectively toward a plurality of collision positions within a principal surface of the substrate held by the substrate holding unit, and a liquid film forming unit. The liquid film forming unit discharges a protective liquid from a plurality of discharge ports respectively toward a plurality of liquid contact positions within the principal surface of the substrate held by the substrate holding unit to form a plurality of liquid films of the protective liquid that respectively cover different collision positions.

Description

BACKGROUND OF THE INVENTION[0001]1. Field of the Invention[0002]The present invention relates to a substrate processing apparatus and a substrate processing method for processing a substrate, and a nozzle that makes droplets collide with a substrate covered by a liquid film. Examples of substrates to be processed include semiconductor wafers, substrates for liquid crystal displays, substrates for plasma displays, substrates for FEDs (Field Emission Displays), substrates for optical disks, substrates for magnetic disks, substrates for magneto-optical disks, substrates for photomasks, ceramic substrates, and substrates for solar cells.[0003]2. Description of Related Art[0004]In a manufacturing process for a semiconductor device or a liquid crystal display, etc., a substrate processing apparatus is used to process substrates, such as semiconductor wafers, glass substrates for liquid crystal displays. A substrate processing apparatus described in Japanese Unexamined Patent Application P...

AI Technical Summary

Benefits of technology

This patent text describes a method and apparatus for processing substrates that reduces variations in film thickness and improves processing quality. This means that the method and apparatus make it easier to control the thickness of the film on different parts of the substrate, which can improve the overall quality of the processed substrate.

Problems solved by technology

Further, the cover rinse liquid flowing to a collision position at a downstream side with respect to a direction of flow of the cover rinse liquid along the substrate is impeded in its progress by droplets injected onto a collision position at an upstream side, and thus a supply flow rate of the cover rinse liquid differs between the upstream side collision position and the downstream side collision position, thereby further increasing the variation of liquid film thickness.

Thus, with the substrate processing apparatus described in Japanese Unexamined Patent Application Publication No. 2011-29315, it is difficult to control the liquid film thicknesses at the respective collision positions to be of a fixed magnitude.

When the liquid film covering the collision positions is thin, a large impact is applied to the substrate by collisions of the droplets and a pattern formed on the substrate may become damaged.

However, if the liquid film covering the collision positions is thick, impacts applied to particles attached to the substrate decrease and a decrease of particle removal rate may thus occur.

As mentioned above, it is difficult to control the liquid film thicknesses at the respective collision positions to be of a fixed magnitude with the substrate processing apparatus described in Japanese Unexamined Patent Application Publication No. 2011-29315, and it is thus difficult to form a liquid film of the optimal thickness at all collision positions.

It is thus difficult to perform optimal processing at the respective collision positions.

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