Method of manufacturing high-integrated semiconductor device and semiconductor device manufactured using the same

Abstract

A semiconductor device comprises a plurality of vertical transistors each comprising barrier metal layers corresponding to source / drain regions in which a conduction region is formed under a channel region having a pillar form, and a bit line comprising a metal layer to connect the plurality of vertical transistors.

Description

CROSS-REFERENCE TO RELATED APPLICATION[0001]The present application claims priority to Korean patent application number 10-2008-0075039, filed on Jul. 31, 2008, which is incorporated by reference in its entirety.BACKGROUND OF THE INVENTION[0002]The present invention relates to a method of manufacturing a semiconductor device and, more particularly, to a method of manufacturing a highly integrated semiconductor device (e.g., vertical transistors) and improving the operating characteristic and yield of the semiconductor device.[0003]In general, a semiconductor is a material classified according to its electrical conductivity and belongs to an intermediate region between a conductor and a nonconductor. The semiconductor has a property that is similar to that of the nonconductor in a pure state, but has an increasing electrical conductivity with the addition of impurities or other control. Such a semiconductor is used to produce semiconductor elements, such as transistors, by adding imp...

AI Technical Summary

Benefits of technology

[0007]Various embodiments of the invention are directed to providing a method of manufacturing a semiconductor device including vertical transistors, which is capable of improving the operating characteristic and yield of a semiconductor device by forming bit lines using a conductive material and removing alignment error when the bit lines are formed, and a semiconductor device manufactured using the same.

Problems solved by technology

Accordingly, in the case where a complicated is semiconductor memory device is fabricated, it is difficult to reduce the area of the semiconductor memory device because of a number of transistors included in the semiconductor memory device.

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