Method of manufacturing high-integrated semiconductor device and semiconductor device manufactured using the same
a manufacturing method and semiconductor technology, applied in the direction of semiconductor devices, basic electric elements, electrical appliances, etc., can solve the problems of difficult to reduce the area of the semiconductor memory device, and achieve the effect of improving the operating characteristic and yield of the semiconductor device and removing alignment errors
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[0030]Embodiment of the present invention will now be described in detail with reference to the accompanying drawings.
[0031]FIGS. 1a to 1k are plan views and cross-sectional views showing a method of manufacturing a semiconductor device including vertical transistors according to an embodiment of the present invention. In particular, an example in which a vertical transistor is used as a cell transistor included in each of unit cells within a semiconductor memory device is described.
[0032]FIG. 1a is a plan view showing a cell array region within the semiconductor device, and FIG. 1b is a cross-sectional view of the semiconductor device taken along line X-X′ in FIG. 1a.
[0033]A pad oxide layer 104 is formed on a semiconductor substrate 102. A hard mask nitride layer 106 is formed on the pad oxide layer 104. A photoresist layer is coated on the hard mask nitride layer 106, and a photolithography process using a mask is then performed, thereby forming a first photoresist layer pattern ...
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