Integrated trench mosfet and junction barrier schottky rectifier with trench contact structures

Abstract

A trench MOSFET in parallel with trench junction barrier Schottky rectifier with trench contact structures is formed in single chip. The present invention solves the drawback brought by some prior arts, for example, the large area occupied by planar contact structure and high gate-source capacitance. As the electronic devices become more miniaturized, the trench contact structures of this invention are able to be shrunk to achieve low specific on-resistance of Trench MOSFET, and low Vf and reverse leakage current of the Schottky Rectifier.

Description

BACKGROUND OF THE INVENTION[0001]1. Field of the Invention[0002]This invention relates generally to the cell structure, device configuration and fabrication process of power semiconductor devices. More particularly, this invention relates to an improved cell configuration and processes to manufacture trench MOSFET device with junction barrier Schottky rectifier in the same cell so that integrated cells with spacing savings and lower capacitance and higher performance are achieved.[0003]2. The Prior Arts[0004]Normally for high efficiency DC / DC application, a Schottky rectifier is externally added in parallel with a MOSFET device. FIG. 1 is a circuit diagram that illustrates the implementation of a Schottky diode with a power MOSFET device. Once the parasitic P / N diode is turned on, both the electron and hole carriers are generated thus require longer time to eliminate the carriers by electron-hole combination. In order to achieve higher speed and efficiency, the Schottky diode (SKY) ...

AI Technical Summary

Benefits of technology

[0009]It is therefore an aspect of the present invention to provide improved semiconductor power device configuration and manufacture processes for providing semiconductor power devices with trench junction barrier Schottky rectifier in single chip with trench Schottky contact instead of planar contact as shown in above prior arts so that space occupied which is one of the major technical limitations discussed above can be reduced.

[0010]Another aspect of the present invention is to provide improved semiconductor power device configuration and manufacture processes for providing semiconductor power devices with trench junction barrier Schottky rectifier in single chip wherein no additional mask is required to integrated the trench junction barrier Schottky rectifier with trench MOSFET compared with the planar Schottky contact and that leads to a cost-down of the production.

[0011]Another aspect of the present invention is to provide improved semiconductor power device configuration and manufacture processes for providing semiconductor power devices with trench junction barrier Schottky rectifier in single chip so that the devices with trench contact are able to be shrunk to achieve low specific on-resistance for trench MOSFET, and low Vf and reverse leakage current for trench junction barrier Schottky rectifier.

[0012]Briefly, in a preferred embodiment, the present invention discloses a semiconductor power device comprising a trenched MOSFET and a trenched junction barrier Schottky rectifier in single chip. Wherein the trench MOSFET device comprises a trenched gate surrounded by a source region encompassed in a body region above a drain region disposed on a bottom surface of a substrate. The semiconductor power device further includes an insulation layer covering the trenched semiconductor power device with a source-body contact trench opened through and extending into the source and body regions and filled with Tungsten plugs therein. Said Tungsten plugs contact all said source region with a metal of Aluminum alloy or Copper serving as source metal by a layer of Ti, or Ti / TiN deposited along top surface of the insulator layer. A region underneath said contact trench is more heavily doped than the body region to reduce the resistance between said trench contact metal plug and said body region. The trenched junction barrier Schottky rectifier further includes junction barrier Schottky contact trench and more heavily doped region at the bottom of each contact filled with a layer of Ti silicide / TiN or Co silicide / TiN along each trench contact sidewall and Tungsten plug connected to said source metal serving as anode of said Schottky rectifier; other contact trenches formed in the P-body adjacent to said junction barrier Schottky contact trench for said P-body contact to said source metal.

[0014]In an exemplary embodiment, the structure disclosed is the same as the structure mentioned in the first embodiment except that the trench MOSFET has double gate oxides with thick oxide on trench bottom to reduce the gate charge for power saving.

Problems solved by technology

The configurations as disclosed in the patented invention have a disadvantage that the Schottky diodes occupy additional space for planar contact that is about the same space as the MOSFET.

The Trench Schottky diodes further suffer from a high leakage between drain and source due to phosphorus increase at channel region during the sacrificial and gate oxidation processes.

The configuration again has disadvantages that the Schottky diode occupies additional space for planar contact and reverse leakage current Ir between anode and cathode is high.

Also, the formation process requires additional contact mask for the Schottky diode thus increases the cost and processes complications for producing the MOSFET power device with Schottky diode.

The configuration has disadvantage that it is difficult to optimize both performance of the Schottky diode and the trench MOSFET when they share same mesa space between two adjacent trenches and same source trench contact.

Furthermore, the manufacturing cost is increased due to the requirement that an additional P+ mask is required to form the trench Schottky diodes.

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