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Plasma ethching apparatus and plasma etching process

a plasma etching and apparatus technology, applied in the direction of electric discharge tubes, solid-state devices, semiconductor devices, etc., can solve the problems of significant waste of insulating materials, difficult to etch the reaction product enough, etc., to prevent the forming of the chamber of insulating materials with reliability, reduce the effect of forming the chamber and reducing the number of defects

Inactive Publication Date: 2007-04-05
PANASONIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention relates to a plasma etching apparatus and process for removing a film from a substrate in a nonvolatile memory. The apparatus includes a chamber capable of reducing pressure, a substrate support provided inside the chamber, and two electrodes for generating plasma. The apparatus can effectively remove the film without leaving any reaction product in the chamber that could cause defects or particles. The invention also provides a detection means for detecting the reaction product and a drive mechanism for moving the second electrode to remove the reaction product from the chamber. The technical effects of the invention include preventing the insulating material from being etched and suppressing particle generation.

Problems solved by technology

Where the reaction product remains adhered to the insulating chamber inner wall in this way, there is caused a problem in that particles are generated inside the chamber 1 and fall onto the wafer 3 to cause defects.
Therefore, it is difficult to etch the reaction product enough by adjusting the voltage value applied to the FS electrode 40 during the etching.
This also brings about a problem of significant waste of the insulating material.

Method used

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  • Plasma ethching apparatus and plasma etching process
  • Plasma ethching apparatus and plasma etching process
  • Plasma ethching apparatus and plasma etching process

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first embodiment

[0042] Hereinafter, an explanation is given to a plasma etching apparatus and a plasma etching process according to a first embodiment of the present invention with reference to the drawings.

[0043]FIG. 1A is a view illustrating a schematic configuration of the plasma etching apparatus according to the first embodiment of the present invention. The plasma etching apparatus of the present embodiment allows generation of plasma which couples inductively with an ICP coil and plasma which couples capacitively with an FS electrode. As to be described later, a major feature of the apparatus is that the FS electrode is separated in two or more.

[0044] More specifically, as shown in FIG. 1A, the apparatus of the present embodiment includes an electrode 2 serving also as a wafer support arranged in a chamber 1 for performing plasma treatment such as dry etching, i.e., a chamber 1 capable of reducing pressure. The electrode 2 is installed on the bottom of the chamber 1 via a support member 2a...

second embodiment

[0065] Hereinafter, an explanation is given to a plasma etching apparatus and a plasma etching process according to a second embodiment of the present invention with reference to the drawings.

[0066]FIG. 4A is a view illustrating a schematic configuration of a plasma etching apparatus according to the second embodiment of the present invention. The plasma etching apparatus of the present embodiment allows generation of plasma which couples inductively with an ICP coil and plasma which couples capacitively with an FS electrode. Major features thereof are that the FS electrode moves in a creeping manner along a top plate at the top of a chamber 1 and that a device for monitoring in-situ a deposit adhered to the top plate (etching reaction product) is provided. That is, according to the etching process of the present invention, the etching is carried out while the step is repeated of specifying a position on the top plate where the reaction product is adhered by the in-situ monitoring ...

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Abstract

A plasma etching apparatus includes: a chamber capable of reducing pressure; a substrate support provided inside the chamber to place a substrate; a first electrode which is arranged outside and in proximity to the chamber and to which high frequency power is applied to generate plasma of an etching gas in the chamber; and a second electrode comprising a plurality of separated electrodes which are arranged between the chamber and the first electrode and to each of which high frequency power is applied independently.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS [0001] This non-provisional application claims priority under 35 U.S.C. § 119(a) on Patent Application No. 2004-066692 filed in Japan on Mar. 10, 2004, the entire contents of which are hereby incorporated by reference. BACKGROUND OF THE INVENTION [0002] (a) Field of the Invention [0003] The present invention relates to a plasma etching apparatus and a plasma etching process mainly used for patterning an electrode material film of a ferroelectric capacitor. In particular, the invention relates to a plasma etching apparatus for fine patterning of the electrode material film while suppressing particle generation and a plasma etching process using the same. [0004] (b) Description of Related Art [0005] With the increase in density, functionality and speed of semiconductor integrated circuit devices in recent years, techniques of using a nonvolatile memory (e.g., FeRAM (Ferroelectric Random Access Memory)) have been proposed. In the nonvolatile memo...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): C23F1/00H01L21/306H01L21/3065H01L21/8246H01L27/105
CPCC23F4/00H01J37/32091H01J37/321H01L21/32136H01L21/32139
Inventor OHKUNI, MITSUHIRO
Owner PANASONIC CORP
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