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Process for fabricating semiconductor device

a technology of semiconductor devices and fabrication processes, applied in semiconductor devices, electrical devices, transistors, etc., can solve the problems of thermal influence on the substrate, low productivity, and inferior physical properties of crystalline silicon semiconductors, so as to prevent heat damage on the substrate, improve crystal character, and improve the effect of crystal character

Inactive Publication Date: 2006-06-01
SEMICON ENERGY LAB CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This process effectively increases the crystallinity of silicon films to 90% or more, improving semiconductor device performance while minimizing substrate damage and enhancing productivity by reducing heating time and hydrogen decomposition.

Problems solved by technology

The physical properties thereof, such as electric conductivity, however, are still inferior to those of a crystalline silicon semiconductor.
However, such a high temperature heating has a problem of thermally influencing the substrate.
Furthermore, since the heating time required for crystallization was several tens hours or longer, productivity was low.
However, since the film formed by plasma CVD and low pressure CVD contains a lot of hydrogen combined with silicon, the decomposition reaction of hydrogen is mainly caused by RTA owing to the short time of RTA, that is, the crystallization does not sufficiently proceed.
Furthermore, there is a problem that hydrogen is ejected to the exterior of the film by the decomposition reaction of hydrogen to degrade the morphology of the film surface.

Method used

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  • Process for fabricating semiconductor device
  • Process for fabricating semiconductor device
  • Process for fabricating semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0033] Referring to FIGS. 1(A) to 1(D), the present example relates to a process for fabricating a circuit comprising a p-channel TFT (hereinafter referred to simply as a “PTFT”) and an n-channel TFT (hereinafter referred to simply as an “NTFT”) formed in a complementary arrangement using a crystalline silicon film formed on a glass substrate. The structure obtained in the present example is applicable to switching elements of pixel electrodes and to peripheral driver circuits of active liquid crystal display devices, as well as to image sensors and three-dimensional integrated circuits.

[0034] Referring to the cross section views in FIGS. 1(A) to 1(D), the fabrication process of the present example is described below. A 2,000 Å thick silicon oxide film was deposited as a base film 102 on the surface of a Coming 7059 glass substrate 101 by a sputtering process. Mask alignment in the later steps can be facilitated by annealing the substrate either before or after depositing the base ...

example 2

[0053] The present example relates to an active-matrix type liquid crystal display device having N-channel TFTs (NTFTs) each attached as a switching element to each of the pixels. The following description refers to a single pixel only, however, a practical active-matrix type liquid crystal device comprises a great number (generally several hundred thousands) of pixels all having the same structure simultaneously. Furthermore, the TFT not necessarily be an NTFT, and a PTFT can be employed as well. The TFT need not be provided to the pixel portion of the liquid crystal display, and it can be used in the peripheral circuits. Moreover, it can be used in image sensors and in other devices. In short, the application is not limited as long as it is used as a thin film transistor.

[0054] Referring to the step sequential structures shown in FIGS. 2(A) to 2(D), the process for fabricating the structure according to an embodiment of the present invention is described below. A 2,000 Å thick fi...

example 3

[0061] Referring to FIGS. 3(A) to 3(E), a process for fabricating a TFT circuit according to an embodiment of the present invention is described below. A substrate of a glass having a strain point in the range of from 550 to 650° C., such as an AN2 glass substrate having a strain point of 616° C., was used. To prevent shrinking from occurring, the substrate was subjected previously to pre-annealing at 670° C. for a duration of 4 hours and to cooling to 450° C. at a rate of 0.1° C. / min in a manner similar to that in Example 1. A base film 302 was formed on the substrate 301, and an amorphous silicon film 303 having thickness from 300 to 800 Å and a 200 Å thick silicon oxide film 304 were deposited thereafter by plasma CVD. The resulting structure was heated for annealing at 620° C. for a duration of 30 minutes. After the thermal annealing, the substrate was rapidly cooled to 450° C. at a rate of from 2 to 200° C. / sec, preferably, at a rate of 10° C. / sec or higher. This treatment prev...

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Abstract

A process for fabricating a semiconductor device comprising the step of, after patterning the silicon film crystallized to a low degree by thermally annealing an amorphous silicon film into an island by etching, irradiating an intense light of a visible light or a near infrared radiation to effect a short-period annealing (RTA) to the silicon film of low crystallinity. Thus, the crystallinity of the silicon film is improved and the silicon film is densified in a short-period.

Description

BACKGROUND OF THE INVENTION [0001] 1. Industrial Field of the Invention [0002] The present invention relates to a process for fabricating an insulated gate-structured semiconductor device such as a thin film transistor (TFT) or a thin film diode (TFD), comprising a non-single crystal silicon film formed on an insulating substrate such as a glass substrate or on an insulating film formed on various type of substrate. The present invention also relates to a process for fabricating a thin film integrated circuit (IC) to which TFT or TFD is applied, and more particularly, to a thin film integrated circuit (IC) for an active-matrix type liquid crystal displaying unit. [0003] 2. Prior Art [0004] Semiconductor devices developed heretofore comprising TFTs on an insulating substrate (such as a glass substrate) include an active matrix-addressed liquid crystal display device whose pixels are driven by TFTs, an image sensor, or a three-dimensional integrated circuit. [0005] The TFTs utilized i...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H01L29/04H01L21/336H01L21/20H01L21/77H01L21/84H01L29/786
CPCH01L21/02422H01L21/02488H01L21/02532H01L21/02667H01L21/02672H01L27/1285H01L29/66757H01L29/78624H01L27/1277H01L27/1281H01L21/02686H01L21/18
Inventor TAKEMURA, YASUHIKO
Owner SEMICON ENERGY LAB CO LTD
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