Semiconductor device with silicon dioxide layers formed using atomic layer deposition

Abstract

Improved methods are disclosed for catalyst-assisted atomic layer deposition (ALD) to form a silicon dioxide layer having superior properties on a semiconductor substrate by using a first reactant component consisting of a silicon compound having at least two silicon atoms, or using a tertiary aliphatic amine as the catalyst component, or both in combination, together with related purging methods and sequencing.

Description

RELATED APPLICATIONS [0001] This application is a divisional of U.S. application Ser. No. 10 / 459,943, filed on Jun. 12, 2003, which relies for priority upon Korean Patent Application No. 02-39428, filed on Jul. 8, 2002 and Korean Patent Application No. 03-6370, filed Jan. 30, 2003, the contents of which are herein incorporated by reference in their entirety.BACKGROUND OF THE INVENTION [0002] 1. Field of the Invention [0003] The present invention relates generally to improved methods for growing silicon dioxide layers on substrates, such as in semiconductor manufacture, using atomic layer deposition processes. The methods of this invention facilitate exercising extremely precise control over the properties of a silicon dioxide layer applied, for example, to a gate oxide or a dielectric layer. The methods of this invention have particular utility in fabricating gate spacers, gate oxides, silicide blocking layers, bit line spacers, inter-level dielectric layers, etch stoppers, and rela...

AI Technical Summary

Benefits of technology

This patent describes improved methods for making high-quality silicon dioxide films on semiconductor substrates using catalyst-assisted atomic layer deposition (ALD). The methods involve using specific silicon compounds and tertiary aliphatic amine compounds as reactants and catalysts, respectively. The resulting films have better properties and purity. The patent also provides methods for hardening the films, optimal temperature and pressure conditions for carrying out the methods, and alternative reaction sequences. Overall, this patent provides a more effective and reliable way to produce high-quality silicon dioxide films for various semiconductor applications.

Problems solved by technology

As a result, a problem arises due to increased pattern density variation and a corresponding decrease in uniformity.

Klaus '442 teaches, however, that the big drawback to ALD techniques was that they typically required temperatures greater than 600° K. and reactant exposures of greater than 109 L (where 1 L=10−6 Torr sec) for the surface reactions to reach completion.

Such high temperature and high exposure procedures are not desirable for ultra-thin film deposition applications for various reasons including the difficulty of carrying out such procedures.

Although the catalyst-assisted deposition processes of the Klaus '442 patent represent substantial advances in ALD technology, and do make possible room-temperature ALD, it has been found that the surface density, uniformity and quality of thin films grown using the Klaus '442 technique will not meet increasingly demanding standards in the semiconductor industry.

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