Processing apparatus

a technology of processing apparatus and processing chamber, which is applied in the direction of electrical apparatus, hot plate heating arrangement, electric discharge tube, etc., can solve the problems of difficult to attach the lamp to the processing chamber for mechanical reasons, difficult to control the temperature independently of the plasma, and the inability to make space for the lamp within the processing chamber, etc., to achieve the effect of not making the structure inside the table complicated

Inactive Publication Date: 2005-10-27
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0021] According to the processing apparatus of the present invention, the temperature of the substrate to be processed on the table can be controlled at a given temperature...

Problems solved by technology

However, the plasma-heat-input method has the disadvantage that the substrate temperature is sensitive to change in the plasma and therefore controlling temperature independently of the plasma is difficult.
The lamp heating method has the disadvantage that it is difficult to attach the lamp to the processing chamb...

Method used

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first embodiment

[0026]FIG. 1 shows the structure of a plasma etching apparatus according to the present invention. The plasma etching apparatus of FIG. 1 is a parallel-plate type plasma etching apparatus and includes, for example, a cylindrical chamber (processing chamber) 10 formed of aluminum which has had surfaces alumite treatment (anodization). The chamber 10 is grounded for safety.

[0027] On the bottom of the chamber 10, a columnar support 14 is arranged on an insulation plate 12 formed of ceramic or the like. The support 14 is formed of aluminum, for example. A disc-like susceptor 16 that is formed of aluminum, for example, is provided on the support 14. The susceptor 16 serves as both a table and a lower electrode. A substrate to be processed, for example, the semiconductor wafer W, is placed on the susceptor 16.

[0028] An electrostatic chuck 18 for holding the semiconductor wafer W with a Coulomb force or a Johnson-Rahbeck force is provided on the upper surface of the susceptor 16. The elec...

second embodiment

[0049] In the second embodiment, a disc-like susceptor lower electrode 92 formed of aluminum, for example, is arranged at the bottom of the chamber 10 via the insulation plate 12. A susceptor 94 formed of a dielectric material such as ceramic, for example, is provided on the susceptor lower electrode 92. A susceptor upper electrode 96, in the form of a plate or sheet, is provided inside the susceptor 94 so as to be close to the upper surface (substrate-placed surface) of the susceptor 94. The material for the susceptor upper electrode 96 is preferably high-melting point metal such as tungsten, molybdenum, or nickel.

[0050] A radio-frequency power supply 98 causes the susceptor 94, formed of a dielectric material, to generate heat by radio-frequency heating. This allows control of the temperature of the semiconductor wafer W on the susceptor 94 in the heating method. One output terminal of the radio-frequency power supply 98 is electrically connected via a feed line 100 to the suscept...

third embodiment

[0053] In the third embodiment, a coil 110 is provided under the susceptor 94, concentrically with the susceptor 94 or the susceptor electrode 96. A radio-frequency power supply 112 causes the electrode 96 inside the susceptor 94 to generate heat by radio-frequency heating in order to control the temperature of the semiconductor wafer W on the susceptor 94 in the heating method. The radio-frequency power supply 112 is electrically connected at its output terminal to the coil 110 via a feed line 114 and preferably outputs radio-frequency radiation of a frequency in a range from 1 kHz to 10 MHz, for example, radiation of 2 kHz. When the radio-frequency current from the radio-frequency power supply 112 flows through the coil 110, a radio-frequency electromagnetic field J formed by the coil 110 penetrates the susceptor electrode 96, causing the generation of an eddy current in the susceptor electrode 96. The thus generated eddy current causes the susceptor electrode 96 to generate heat,...

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Abstract

The temperature of a substrate to be processed on a table can be controlled to be at a desired temperature by using a heating method that simplifies the structure inside the table and requires no special heating arrangement. An electrostatic chuck provided on an upper surface of a susceptor includes an electrode portion formed by a conductive plate or film and a pair of dielectric or insulation sheets sandwiching the electrode portion therebetween. A direct-current voltage from a direct-current power supply is applied to the electrode portion via a feed line for electrostatic absorption. A radio-frequency power supply causes the electrode portion of the electrostatic chuck to heat by resistance heating. This affects the temperature of the semiconductor wafer on the susceptor in the heating method, thereby providing control over its temperature. One output terminal of the radio-frequency power supply is electrically connected to the susceptor via another feed line, while the other output terminal is connected to the ground potential. The radio-frequency power supply outputs radio-frequency radiation of 10 kHz, for example, with a power that is preferably variable and controllable.

Description

BACKGROUND OF THE INVENTION [0001] 1. Field of the Invention [0002] The present invention relates to a processing apparatus for performing a desired process on a substrate to be processed on a table in a processing chamber. More particularly, the present invention relates to a processing apparatus that employs a method for heating the substrate on the table. [0003] 2. Description of the Related Art [0004] In a single-wafer process, a substrate to be processed is placed on a table in a processing chamber that is in a vacuum state. Typically this process comprises steps such as etching, deposition, oxidation, and sputtering performed during the manufacturing of semiconductor devices or FPDs (Flat Panel Displays). Process gas is then supplied to the inside of the processing chamber while the temperature of the substrate is kept constant on the table. In that process, plasma is often used to accelerate ionization, chemical reaction or the like of the process gas. [0005] The methods for ...

Claims

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Application Information

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IPC IPC(8): C23F1/00H05B3/68H01J37/32H01L21/00H01L21/3065H01L21/68H01L21/683
CPCH01J37/32082H01J37/32174H01L21/67109H01L21/67069H01J37/32577
Inventor HIGASHIURA, TSUTOMU
Owner TOKYO ELECTRON LTD
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