Semiconductor fabrication and structure for field-effect and bipolar transistor devices

Abstract

Semiconductor devices have device regions in which semiconductor properties such as spreading resistivity and its profile are significant. In making a p-type device region on a semiconductor wafer, an initial semiconductor device region is defined by a buried region, and an initial spreading resistivity profile is developed by annealing. After annealing, semiconductor device properties can be enhanced by removing a surface sub-region of the initial device region, and can be further improved by epitaxially growing thereon a monocrystalline film as an improved channel layer for FET devices. Such properties are relevant in MOS as well as bipolar devices.

Description

[0001] This is a divisional application of application Ser. No. 09 / 800,213 filed on Mar. 6, 2001.TECHNICAL FIELD [0002] The present invention relates to semiconductor devices and, more particularly, to VLSI / ULSI fabrication of MOSFET and bipolar transistors. BACKGROUND OF THE INVENTION [0003] The need for scaling metal-oxide-semiconductor (MOS) devices down to below 0.1 μm feature size in very-large-scale integrated (VLSI) circuits has been clearly indicated in the National Technology Road Map for, Semiconductor Technology (1997 Edition), Semiconductor Industry Association, San Jose, Calif. For such circuits, silicon-on-insulator (SOI) MOS devices appear to be promising as described in SOI Technology: Materials to VLSI (2nd edition), Boston, Kluwer, 1997. Such materials are disadvantaged, however, in having a large dose of oxygen ions implanted through the top surface layer of a silicon wafer on which devices are fabricated. [0004] An alternative method for fabricating SOI materials...

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Benefits of technology

[0008] In making a p-type device region on a semiconductor wafer, an initial semiconductor device region is defined by a buried region, and an initial spreading resistivity profile is developed by annealing. I have discovered that, after annealing, semiconductor device properties can be enhanced by removing a surface sub-region of the initial device region, and can be further improved by epitaxially growing thereon a monocrystalline film as an improved channel layer for FET devices. Such properties are relevant in MOS as well as bipolar devices.

Problems solved by technology

Such materials are disadvantaged, however, in having a large dose of oxygen ions implanted through the top surface layer of a silicon wafer on which devices are fabricated.

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