Film etching method

Abstract

This invention is a thin film etching method, being applied to a semiconductor or thin film transistor array (TFT Array) film process, to improve the undercut problem of existing etching, or make the etched film's shape more perfect. The film etching method divides the existing etching process into two stages, and between the two stages, inserting into a photoresist etching process, and through appropriate photoresist etching, it increases the contact area of the film and the etching materials, so that it can eliminate the existing etching problem that the undercut or file shape is not perfect.

Description

technical field [0001] The present invention relates to a thin film etching method, in particular to a thin film etching method applied in the thin film manufacturing process of semiconductor or thin film transistor arrays to eliminate chamfering after etching or improve the imperfect shape of the thin film after etching method. Background technique [0002] When using thin-film technology to manufacture electronic components or wires, there are generally multiple processes such as film formation, photoresist, and etching according to the characteristics of the manufactured components, and the etching is to use chemical reactions or physical impacts on materials. The technology of removal by action can achieve specific functions by forming the film into a specific structural shape by etching. Etching techniques can be divided into two types: Wet Etching and Dry Etching. In wet etching, chemical solution is used to achieve the purpose of etching through chemical reaction, w...

AI Technical Summary

Problems solved by technology

[0007] The purpose of the present invention is to adjust the steps of thin film manufacturing. By adding an etching process of stripping the photoresist, the contact area between the thin film and the etching material is increased, so that the chamfer produced by the existing etching process can be eliminated. or problems with imperfect film shape

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