Film etching method

Abstract

This invention is a thin film etching method, being applied to a semiconductor or thin film transistor array (TFT Array) film process, to improve the undercut problem of existing etching, or make the etched film's shape more perfect. The film etching method divides the existing etching process into two stages, and between the two stages, inserting into a photoresist etching process, and through appropriate photoresist etching, it increases the contact area of the film and the etching materials, so that it can eliminate the existing etching problem that the undercut or file shape is not perfect.

Description

technical field [0001] The invention relates to a thin film etching method, in particular to a thin film etching method applied in the thin film manufacturing process of a semiconductor or thin film transistor array to eliminate chamfering after etching or improve the imperfect shape of the thin film after etching. Eclipse method. Background technique [0002] When using thin-film technology to manufacture electronic components or wires, there are generally multiple manufacturing processes such as film formation, photoresist, and etching according to the characteristics of the manufactured components, and the etching is to use chemical reactions or physical The technology of removal by impact can achieve specific functions by forming the film into a specific structural shape by etching. Etching techniques can be divided into two types: "Wet Etching" and "Dry Etching". In wet etching, chemical solution is used to achieve the purpose of etching through chemical reaction, whi...

AI Technical Summary

Problems solved by technology

It can be seen from the above diagram that, in addition to Figure 1A , 1B In addition to the problem of chamfering or poor shape when etching a double-layer film as shown in 1C, there will also be a problem of poor etching when etching a single-layer thin film or multi-layer thin film etching

[0006] The disadvantages caused by the above-mentioned bad shape structure include: 1. The formed chamfer is a pointed conductor structure, so it is easy to have the effect of tip discharge, causing electrostatic damage and making the component invalid

2. When peeling the film, it is easy to cause liquid or foreign matter to accumulate on the chamfered part, making the cleaning incomplete, resulting in poor coating ability of the film, resulting in defects such as film floating or film peeling.

3. The above bad phenomena, when located in the wire structure such as scanning lines or data lines, often cause bad circuits

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