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Cleaning liquid of medicinal liquor supply device for semiconductor manufacture

A technology for supplying device and cleaning liquid, applied in the field of cleaning liquid, can solve the problems of insufficient cleaning performance, poor coating, increased risk, etc.

Inactive Publication Date: 2007-05-30
TOKYO OHKA KOGYO CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, even when the above two types of cleaning solutions are used, the cleaning performance is insufficient, the risk of foreign matter generation due to the contamination of the supply device, the subsequent coating failure, and the deterioration of the photoresist upper protective film after coating. Reduced transparency, etc., increasing the risk of various problems

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0058] Into a 100mL container, put 30mL of a positive-type photoresist material ["TArF-P6111" (manufactured by Tokyo Ohka Industry Co., Ltd.)], 30mL of a photoresist upper layer protective film forming material ["Cytop CTX -809SP2" (manufactured by Asahi Glass Co., Ltd.) dissolved in perfluorotributylamine at a concentration of 1 mass %], and 30 mL of C as a cleaning agent component 4 f 9 OCH 3 , mixed and allowed to stand for 30 minutes. When the mixed liquid in the container at this time was observed with the naked eye, the mixed liquid was colorless and transparent, and layer separation was not observed, and it was completely dissolved.

Embodiment 2

[0062] Equivalently mix a positive photoresist material ["TArF-P6111" (manufactured by Tokyo Ohka Industry Co., Ltd.)], a material for forming a photoresist upper layer protective film ["Cytop CTX-809SP2" (Asahi Glass ( Co., Ltd.) dissolved in perfluorotributylamine to form a solution with a concentration of 1% by mass] to obtain a mixed solution.

[0063] Use propylene glycol monomethyl ether acetate to clean the coating cup attached to the mixed solution, and then use C 4 f 9 OCH 3 The composed cleaning solution is used for cleaning, and then a perfluoro(2-butyl)tetrahydrofuran solution is used for cleaning treatment. Visual observation of the inside of the cup after the washing process revealed that the solution was completely removed.

Embodiment 3

[0065] In Example 2, as a cleaning solution, C 4 f 9 OC 2 h 5 instead of C 4 f 9 OCH 3, except that, the same method as in Example 2 was used for cleaning treatment. As a result of visual observation of the inside of the cup after the cleaning treatment, solid matter was completely removed.

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Abstract

The invention relates to a clean agent for cleaning liquor feeder apparatus in semiconductor producing process, characterizing in: the clean agent at least containing hydrofluoroether. According to this invention, a clean agent can clean liquor feeder apparatus especially for selcting from photoresistic film forming material processed by immersion exposure process, forming material of photoresist upper protecting film and at least one liquor feeder apparatus used in semiconductor producing process of fluorin organic solvent is provided. The clean agent has good cleaning performance, and could not reduce transparence of forming material of photoresist upper protecting film.

Description

technical field [0001] The present invention relates to a cleaning solution for cleaning a chemical solution supply device used in a semiconductor manufacturing process. In particular, it relates to cleaning and supplying a chemical solution for immersion exposure treatment, specifically, supplying a material selected from a photoresist film forming material, a photoresist upper layer protective film forming material, and a fluorine-based organic solvent Cleaning solution of at least 1 chemical solution for the device. Background technique [0002] Photolithography is often used to manufacture fine structures in various electronic devices such as semiconductor devices and liquid crystal devices. In recent years, the high integration and miniaturization of semiconductor devices have progressed rapidly, and the photoresist pattern formation in the photolithography process has also begun to require further miniaturization. [0003] Currently, using photolithography, for examp...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C11D7/30G03F7/42G03F7/32
CPCG03F7/11G03F7/20
Inventor 吉田正昭肋屋和正
Owner TOKYO OHKA KOGYO CO LTD
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