Rare earth medium slurry of rare earth thick film circuit based on metal plate and its preparation technology
A rare earth thick film, dielectric paste technology, used in circuits, conductive materials dispersed in non-conductive inorganic materials, resistance manufacturing, etc.
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Embodiment 1
[0030] This example is a rare-earth thick-film circuit rare-earth dielectric slurry for 1Cr15 (429#) series stainless steel metal substrates. It is composed of a solid-phase component composed of glass-ceramic powder and an organic solvent carrier. Its components and formulation process are as follows :
[0031] 1. The solid phase component is SiO 2 -Al 2 o 3 -CaO-B 2 o 3 -La 2 o 3 It is glass-ceramic, the formula is: SiO 2 (36%), Al 2 o 3 (16%), CaO (25%), B 2 o 3 (7%), La 2 o 3 (6%), Co. 2 o 3 (2%), TiO 2 (5%), ZrO 2 (3):
[0032]2. Melting process: The melting temperature is: 1350°C for 120 minutes, then quickly out of the furnace and quenched in water to obtain glass slag. The glass slag is ball-milled in a two-stage ball mill to prepare glass-ceramic powder with a particle size less than 3 microns.
[0033] 3. Preparation of organic solvent carrier:
[0034] Dissolve the main solvent, thickener, thixotropic agent, and surfactant in the following propor...
Embodiment 2
[0042] Rare earth dielectric slurry for rare earth thick film circuits used in 1Cr17 (430#) series stainless steel metal substrates. The dielectric slurry is prepared from a solid phase component composed of glass-ceramic powder and an organic solvent carrier. The process steps and formula are as follows:
[0043] 1.SiO2 2 -Al 2 o 3 -CaO-B 2 o 3 -La 2 o 3 The formula of glass-ceramics is: SiO 2 (34%), Al 2 o 3 (19%), CaO (22%), B 2 o 3 (10%), La 2 o 3 (4%), Co. 2 o 3 (1%), TiO 2 (6%), ZrO 2 (4%):
[0044] 2. Melting process: The melting temperature is: 1350°C for 120 minutes, then quickly out of the furnace and quenched in water to obtain glass slag. The glass slag is ball-milled in a two-stage ball mill to prepare glass-ceramic powder with a particle size less than 3 microns.
[0045] 3. Preparation of organic solvent carrier:
[0046] Dissolve the main solvent, thickener, thixotropic agent, and surfactant in the following proportions in water at 85°C for s...
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