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Ceria serosity combination with reinforced polishing uniformity

A technology of polishing slurry and cerium oxide, which is applied to polishing compositions containing abrasives, other chemical processes, chemical instruments and methods, etc., can solve problems such as deterioration of wafer surface uniformity, deterioration of device reliability, and increase in circuit resistance , to achieve the effect of improving polishing uniformity, reducing dishing and erosion

Inactive Publication Date: 2006-12-06
DONGJIN SEMICHEM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In the process of forming the device isolation layer, when the depression 6 occurs, the circuit resistance or the contact resistance increases, and the reliability of the device deteriorates due to electromigration
Moreover, when erosion occurs, the uniformity of the wafer surface deteriorates (this is more severe in a multilayer structure), and the circuit resistance increases and becomes non-uniform

Method used

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  • Ceria serosity combination with reinforced polishing uniformity
  • Ceria serosity combination with reinforced polishing uniformity
  • Ceria serosity combination with reinforced polishing uniformity

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1-7 and comparative Embodiment 1-2

[0023] In order to evaluate the quality of the ceria slurry, a CMP slurry composition was prepared as described below, and chemical mechanical polishing was performed with the CMP composition. First, in order to evaluate the effect of polycarboxylic acid and xylitol, prepare described CMP slurry composition, this CMP slurry composition comprises the cerium oxide of 1.0% by weight, the polyacrylic acid (weight average molecular weight) of the amount shown in Table 1 300,000) and xylitol, and the rest are deionized water. The pH of the slurry was controlled with TMAH. In order to evaluate the polishing effect of the slurry composition, a high-density plasma (HDP) method was used to deposit a thickness of SiO 2 layer. And deposited by low pressure CVD method with thick silicon nitride layer. The field oxide layer and the silicon nitride layer were polished using "MomantumTM" polishing equipment manufactured by Speedfam Corporation, "IC1400pad" manufactured by Rodel Corporat...

Embodiment 8-10 and comparative Embodiment 3

[0028] To measure dishing on the polished wafers, CMP slurry compositions were prepared as shown in Table 2, and chemical mechanical polishing was performed. The prepared CMP slurry composition included 1.0% by weight of cerium oxide, polyacrylic acid (with a weight average molecular weight of 200,000) and polyethylene glycol in amounts shown in Table 2, and the rest was deionized water. The pH of the slurry was controlled with TMAH. Then, polishing was performed and the quality of the slurry composition was measured in the same manner as described in Example 1. The polishing test was performed using "STI 3 patterned wafer" manufactured by SKW Corporation.

[0029] [Table 2]

[0030]

[0031] As shown in Table 2, the slurry composition containing polycarboxylic acid or its salt and alcohol compound showed excellent polishing selectivity of field oxide layer to silicon nitride layer and relatively little dishing.

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Abstract

The invention discloses a chemical mechanical polishing slurry compound. It comprises: ceric oxide grinding agent; polycarboxylic acids or polycarboxylate with weight average molecular weight being 50,000-500,000; alcohol compound and water. The optimum proportion by weight of components in relative to total slurry compound are: ceric oxide grinding agent 0.1-20%, polycarboxylic acids or polycarboxylate 0.01-20%, alcohol compound 0.001-10%, and the pH of said slurry is 5-10. The CMP slurry compound is processed with STI (shallow slot insulation) method to form multiplayer construction and increase polishing uniformity and inhibit dent and corrosion of chip.

Description

field of invention [0001] The present invention relates to ceria slurry compositions having enhanced polishing uniformity, and more particularly, to chemical mechanical polishing (CMP) slurry compositions having enhanced polishing uniformity on silicon wafers and inhibiting dishing of the wafers (dishing) and erosion (erosion). Background of the invention [0002] Recently, high-capacity memory devices have been developed due to the development of semiconductor device manufacturing technology, and the wide application of memory devices. Capacity expansion technology for storage devices is based on micro-processing technology whose precision doubles with every generation. In particular, reducing the size of the device isolation layer of the isolation circuit device becomes important. LOCOS (Local Oxidation of Silicon) is commonly used as a device isolation technique, which is the selective growth of thick SiO 2 layer to form a device isolation layer technology. However, t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08J5/14
CPCC09G1/02C09K3/1454H01L21/304H01L21/30625H01L21/3212
Inventor 朴钟大孔铉九李凤祥孙祯炫
Owner DONGJIN SEMICHEM CO LTD
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