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Method for preparing high curie point piezoelectric using water base sol-gel method

A sol-gel, piezoelectric film technology, applied in piezoelectric/electrostrictive/magnetostrictive devices, circuits, electrical components, etc., can solve the problems of increasing cost, toxicity, and increasing the complexity of the preparation process, and achieves The effect of simplifying the process, cheap and reducing costs

Inactive Publication Date: 2006-08-23
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This increases the complexity of the preparation process and also increases the cost;
[0006] (3) Organic solvents (such as ethylene glycol monomethyl ether) are generally used for sol preparation, and most of these solvents are toxic;

Method used

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  • Method for preparing high curie point piezoelectric using water base sol-gel method
  • Method for preparing high curie point piezoelectric using water base sol-gel method
  • Method for preparing high curie point piezoelectric using water base sol-gel method

Examples

Experimental program
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Effect test

Embodiment 1

[0035] 1. Mix 0.01 mol of tetrabutyl titanate, 6 ml of isopropanol and 8 ml of acetylacetone, stir magnetically for 20 minutes, add 30 ml of glacial acetic acid, and continue stirring for 20 minutes;

[0036] 2. Slowly add 0.005 moles of bismuth nitrate to the above solution, and continue to stir until all solids are completely dissolved, then slowly pour in 25 ml of deionized water, and continue to stir for 20 minutes;

[0037] 3. Slowly add 0.01 mole of lead acetate to the above solution, continue stirring until all solids are completely dissolved, then slowly add 0.005 mole of scandium acetate, stir for 5 hours, add 5 ml of formamide, and stir for 20 minutes to obtain a precursor solution. Leave this solution to age for 10 days;

[0038] 4. Use a syringe to drop the sol on the cleaned silicon substrate through a filter with a pore size of 200 microns. Spin-coating method is used to coat the film, first uniform the glue at a speed of 600 rpm for 9 seconds, and then spin the...

Embodiment 2

[0042] 1. Mix 0.02 mol of tetrabutyl titanate, 10 ml of isopropanol and 10 ml of acetylacetone, stir magnetically for 20 minutes, add 45 ml of glacial acetic acid, and continue stirring for 20 minutes;

[0043] 2. Slowly add 0.01 mole of bismuth nitrate to the above solution, and continue to stir until all solids are completely dissolved, then slowly pour 40 ml of deionized water, and continue to stir for 20 minutes;

[0044] 3. Slowly add 0.02 mole of lead acetate to the above solution, continue stirring until all solids are completely dissolved, then slowly add 0.01 mole of scandium acetate, stir for 5 hours, add 8 ml of formamide, and stir for 20 minutes to obtain a precursor solution. Leave this solution to age for 10 days;

[0045] 4. Use a syringe to drop the sol on the cleaned silicon substrate through a filter with a pore size of 200 microns. Spin-coating method is used to coat the film, first uniform the glue at a speed of 600 rpm for 9 seconds, and then spin the glu...

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Abstract

The present invention belongs to the field of piezoelectric film material preparing technology, and is water base sol-gel process of preparing high Curie point piezoelectric film. Tetrabutyl titanate and nitrate and acetate of other metal cation as main material and glacial acetic acid and deionized water as main solvent are first prepared into stable sol; and the sol is coated and fast annealed to form the piezoelectric film with compact structure and homogeneous components. The piezoelectric film has excellent piezoelectric performance, Curie point as high as 435 deg.c, crystal grain size of 20-100 nm, effective piezoelectric coefficient d33*of about 80 pC / N, comparable with that of the PZT film, and thickness controllable in 0.15-1 micron. The piezoelectric film is suitable for various piezoelectric ferrite elements and devices used in high temperature, and may find wide application in space, automobile and other industrial fields.

Description

technical field [0001] The invention belongs to piezoelectric thin film materials, in particular to a method for preparing high Curie point piezoelectric thin films by using a water-based sol-gel method. Background technique [0002] Piezoelectric ceramics are widely used in communications, home appliances, aviation, detection, computers and many other fields due to their positive and negative piezoelectric properties, and are an important class of functional materials. In recent years, with the rapid development of science and technology, many electronic and electrical equipment have higher and higher requirements for the selected piezoelectric devices. The range of use and the use environment require piezoelectric materials to have greater adaptability. The application of electrical devices has become a top priority. High-power ultrasonic devices used in industry, ultrasonic applications of high-temperature objects, vibration of high-temperature objects, acceleration and ...

Claims

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Application Information

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IPC IPC(8): C04B35/462C04B35/624H01L41/187
Inventor 王晓慧文海李龙土桂治轮
Owner TSINGHUA UNIV
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