Surface processing and forming method of photoresist layer

Abstract

A surface processing method of photo resist layer utilizes reaction gas containing hydrogen bromide or hydrogen iodide to carry out a surface treatment on photo resist layer after patternized photo resist layer is formed on chip in order to prepare a hardened layer on surface of photo resist layer .The said surface treatment process is carried out simultaneously with etching process.

Description

technical field [0001] The invention relates to a semiconductor manufacturing process, in particular to a surface treatment method of a photoresist layer and a method for forming a patterned photoresist layer using the aforementioned surface treatment method. Background technique [0002] In the case of higher and higher circuit integration requirements, the design of the size of the entire circuit element is also forced to advance in the direction of continuous reduction in size. At present, the semiconductor process has entered the 90-nanometer process. The most important step in the entire semiconductor process is the photolithography process. The decision of any critical dimension is dominated by the photolithography step. [0003] However, in the photolithography process, the patterned photoresist layer is formed by exposing and developing the photoresist layer. The relatively narrow width of the photoresist layer makes it difficult to maintain the profile of the photo...

AI Technical Summary

Problems solved by technology

Depend on figure 1 It can be seen that the profile of the patterned photoresist layer is distorted due to the relatively narrow width, which will make the film to be etched when the photoresist layer is used as a mask for the subsequent etching process Layers that distort the pattern or cause resolution loss

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