Memory and method for forming same, semiconductor device

Abstract

The invention provides a memory, a forming method thereof, and a semiconductor device. Using the first isolation structure and the second isolation structure of different insulating materials to define a plurality of unit device active regions is conducive to the formation of isolation regions with different dielectric constants, so that the isolation structure in the isolation region can be used to improve the protection of the word passing through. The isolation performance of the line improves the problem of the electrical drift of the word line.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a memory and a forming method thereof. Background technique [0002] As the semiconductor industry enters a new era of high-performance and multi-functional integrated circuits, the density of semiconductor elements in integrated circuits will increase accordingly, and the spacing between semiconductor elements will decrease accordingly. At this time, for the conductive components used to realize electrical transmission in the semiconductor element, as the distance between adjacent conductive components decreases, the interference phenomenon between adjacent conductive components becomes more and more serious. obvious. [0003] Among them, there is also a trend of shrinking size in the field of memory, so that the arrangement among various components in the memory is also more compact. However, as mentioned above, with the continuous reduction of the distance, it is more...

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Problems solved by technology

However, as mentioned above, with the continuous reduction of the distance, it is more likely to cause the problem of crosstalk between adjacent conductive components

For example, it is easy to crosstalk between adjacent word lines; and it is also easy to generate interference between the word line and the active area of ​​adjacent and isolated unit devices, which will cause problems such as electrical drift of the word line

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