Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method and apparatus for polishing large-scale diamond membrane

A diamond film and large-area technology, which is applied in chemical instruments and methods, crystal growth, electrical components, etc., can solve the problem of high polishing roughness and achieve large polishing area, high polishing precision, and high polishing efficiency Effect

Inactive Publication Date: 2006-05-31
WUHAN INSTITUTE OF TECHNOLOGY
View PDF2 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since the reaction of ions with the surface of the diamond film is non-directional, it is difficult to make the polishing roughness of this method very high.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method and apparatus for polishing large-scale diamond membrane
  • Method and apparatus for polishing large-scale diamond membrane
  • Method and apparatus for polishing large-scale diamond membrane

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0023] The present invention will be further described below in conjunction with the embodiments and accompanying drawings.

[0024] The present invention is a method for polishing a large-area diamond film by using plasma. The method is as follows: firstly, using microwave excitation to generate electron cyclotron resonance plasma, and then using ion cyclotron resonance heating to couple high-frequency power to ion components in the plasma , raise the kinetic temperature of the ions to 10-40eV, and then use the extraction electrode and the gradient magnetic field to control the movement of the ions in the plasma, so that the ions move down to the surface of the diamond film and selectively interact with the diamond film surface to be removed. The carbon atoms undergo an etching reaction to generate volatile gases, thereby completing the polishing of the diamond film.

[0025] This method comprises generation of plasma, ion heating in plasma, ion motion control and ion etching...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A method and an equipment for extended diamond film polishing. It includes such steps as follows: produce electron cyclotron resonance plasm by microwave stimulatingú”high-frequency power was coupled to ion in plasm by ion convoluted vibratingú¼so that the kintic temperature of ion was increased to 10í½40eV; control ion movement by derivative electrode and graded magnetic field so that etching reaction may occur between specific carbon atom that to be wiped off and the ion as the ion moves to the surface of diamond filmú”Volatile gas generated and polishing completed. The equipment consists of four partsú‘plasma generating unitú¼ion heating up unitú¼ion movement controlling unit and etching reaction and polishing unit. Advantages are high polishing efficiencyú¼large polishing dimensionú¼high precision and non pollution of diamond film surface.

Description

technical field [0001] The invention relates to the field of application of plasma technology and diamond superhard materials, in particular to a method and device for polishing a large-area diamond film by using plasma. Background technique [0002] Diamond has the highest hardness, high thermal conductivity and chemical stability, and good light transmission, so it has a wide range of applications in machining, optics, microelectronics and military fields. Because natural diamond is rare and expensive, people have developed a variety of synthetic diamond technologies, including high temperature and high pressure methods and plasma chemical vapor deposition methods. Since the diamond prepared by the plasma chemical vapor deposition method is a continuous film, and has the characteristics of high efficiency and low cost, the diamond film prepared by this method can be widely used in the fields of machining, optics, thermal and semiconductor. However, the diamond film prepar...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C30B33/12H05H1/30
Inventor 马志斌汪建华何艾华万军王传新毛家龙
Owner WUHAN INSTITUTE OF TECHNOLOGY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com