Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Amplifier having switchable negative feedback

一种放大器、负反馈的技术，应用在具有可程序化放大的放大器领域，能够解决杂信进入等问题，达到线性度改善的效果

Inactive Publication Date: 2006-04-12
INFINEON TECH AG
View PDF0 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This results in double signal processing of a signal, thus causing at least a problem with noise generation, since each pass through signal processing causes noise into the signal

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Amplifier having switchable negative feedback
  • Amplifier having switchable negative feedback
  • Amplifier having switchable negative feedback

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0027] figure 1 An amplifier of the present invention will be described in detail. The amplifier includes a transistor device (10) with multi-layer differential amplification, the transistor device (10) further includes an input (12) for inputting a signal to be amplified, and an output for outputting an amplified output signal. The transistor device (10) further comprises a plurality of switches (S1, S2, S3, . . . , Sn 16), by means of which the amplification of the transistor device (10) can be varied. In particular, the transistor device (10) further comprises a plurality of negative feedback resistors (RG1, RG2, RG3, ..., RGn 18) in addition to a plurality of switches (16), wherein each switch in the plurality of switches (16) Corresponding to a negative feedback resistor, for example, as shown in the figure, the negative feedback resistor (RG1) is combined with the switch (S1), and the switch (Sn) is connected with the negative feedback resistor (RGn). By driving / closin...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

An amplifier having programmable amplification includes a transistor circuit having a plurality of negative feedback resistors, a switch being associated to a negative feedback resistor such that the negative feedback resistors of the transistor circuit can be activated and deactivated selectively by operating switches via a controller. Thus, a broadband amplifier having a high linearity can be implemented.

Description

technical field [0001] The present invention relates to an amplifier circuit, especially a broadband amplifier circuit with high dynamic characteristics, and more particularly to an amplifier with programmable amplification. Background technique [0002] In many fields of signal processing, especially in the field of video amplifiers, there is a certain demand for an amplifier with a very wide bandwidth. A typical requirement for an amplifier in the video domain is that a transmission band of 50 to 860 MHz is required. In addition, such amplifiers should have a low noise rate and high linearity. Looked at another way, this means that the nonlinear mixing products of the amplifier remain below a certain threshold. The so-called third-order inter-modulation or the so-called "third-order intercept point" is such a parameter. [0003] Further, a mixer is traditionally downstream of a wideband amplifier, such as an input stage of a television receiver. Most mixers usually con...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H03F1/32H03F3/72H03G3/20H03G1/00H03G3/00
CPCH03F2203/45384H03F2203/7212H03F2203/45392H03F2203/45466H03F2203/45504H03F2203/7203H03G1/0088H03G3/001H03F2200/39
Inventor H·克莱恩W·滋梅曼恩
Owner INFINEON TECH AG
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com