Annealing treatment method of crystal in neutral and inert atmosphere

Abstract

This invention relates to an annealing process method for crystals in neutral and inert atmosphere, which puts crystals to be annealed and processed in a crystal anneal device to charge neutral, or inert or mixed gas to carry out annealing of the crystals and realize carbon, color center elimination, pollution elimination and eliminating the inner stress of the crystals to each their recrystalization. The annealing at high temperature in the neutral or inert gas will not generate new lattice defect and variance of ionic valence by the strong adsorption of inert gas under high temperature.

Description

technical field [0001] The invention belongs to the field of heat treatment of crystals, and relates to high-temperature annealing and heat treatment of crystals, in particular to an annealing method and a heat treatment method of crystals in a neutral atmosphere, an inert atmosphere and a mixed atmosphere of the two. Background technique [0002] Today, the techniques for growing crystals include the induction heating pulling method (ie, the upward method), the Kyroplasty method, the resistance heating pulling method, the oriented temperature gradient method (ie, the oriented temperature gradient method, referred to as the temperature gradient method), and the heat exchange method. Crystal growth is a crystallization process in which the temperature difference at the solid-liquid interface promotes the formation of crystal planes, which is prone to lattice point defects and the introduction of ambient atmosphere pollution, seriously affecting crystal performance. Therefore,...

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Problems solved by technology

[0003] The crystal is annealed at high temperature in an oxidizing atmosphere (atmosphere). Although it can achieve decarburization and decolorization and eliminate the color centers formed by point defects such as oxygen vacancies in the crystal, due to the diffusion and back diffusion of dust in the atmosphere, the annealed crystal will be Impurities in the air are polluted again (resulting in secondary pollution). Therefore, the brightness and transparency of crystals annealed in an oxidizing atmosphere are always unsatisfactory (high-temperature annealing in an oxidizing atmosphere: generally suitable for crystals that need to be annealed in an oxidizing atmosphere first) Crystal), and high-temperature annealing in reducing atmosphere (hydrogen), although the brightness and transparency of the crystal are much better than the results of annealing in oxidizing atmosphere, due to the reduction effect of strong reducing atmosphere in hydrogen, the oxidized crystals grown by various methods In the physical crystal, the color centers formed by point defects such as oxygen vacancies (oxygen vacancies) are not only difficult to eliminate or even deepen, but the crystal varieties that can adapt to annealing in hydrogen are highly targeted, even for the same sapphire crystal. It is also very different (it is only suitable for crystals that really need to be annealed in a reducing atmosphere, such as titanium-doped sapphire), and more importantly, annealing in an oxidizing atmosphere or annealing in a reducing atmosphere is likely to cause changes in the valence state of ions in the crystal lattice. Affect crystal properties

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