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Semiconductor device with improved breakdown voltage and high current capacity

A semiconductor and component technology, applied in the field of vertical power semiconductor components, can solve problems such as destroying components, and achieve the effects of improving avalanche current, high withstand voltage, and improving avalanche destruction current

Active Publication Date: 2006-02-15
FUJI ELECTRIC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0024] If it enters the negative resistance area, due to the positive feedback along the direction of the flowing current, it will cause local concentration of the current and destroy the element

Method used

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  • Semiconductor device with improved breakdown voltage and high current capacity
  • Semiconductor device with improved breakdown voltage and high current capacity
  • Semiconductor device with improved breakdown voltage and high current capacity

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Embodiment approach 1

[0126] figure 1 is a schematic partial plan view showing a chip of a vertical MOSFET element according to Embodiment 1 of the present invention, figure 2 is to mean along figure 1 A vertical cross-sectional view of the state cut along the line A-A' in Fig. 3 is a representation along the figure 1 In the vertical cross-sectional view of the state cut by the BB' line, in the vertical MOSFET of Embodiment 1, except that the impurity concentration of the third p-type regions 34b, 34ba, 34bb is higher than the impurity concentration of the third n-type regions 34a, 34aa, 34ab Besides, with Figure 23 ~ Figure 2 The conventional configuration shown in 5 is the same.

[0127] Such as figure 1 As shown, in Embodiment 1, the first parallel pn structure, the second parallel pn structure, and the third parallel pn structure are arranged parallel to each other in a planar stripe shape. In the third side-by-side pn configuration, the widths of the third n-type regions 34a, 34aa, ...

Embodiment approach 2

[0140] Figure 7 is a schematic partial plan view showing a chip of a vertical MOSFET element according to Embodiment 2 of the present invention, Figure 8 is to mean along Figure 7 A longitudinal sectional view of the state cut by the line A-A' in Figure 9 is to mean along Figure 7 A vertical cross-sectional view of the state where B-B' in is cut. The vertical MOSFET of Embodiment 2 is a modified example of Embodiment 1, and differs from Embodiment 1 in the following points. That is, the impurity concentrations of the third n-type region 34a and the third p-type region 34b are the same, and the width Wp of the third p-type region 34b is wider than the width Wn of the third n-type region 34a. For example, the impurity concentrations of the third n-type region 34a and the third p-type region 34b are 4.8×10 14 cm -3 The width Wp of the third p-type region 34b is 120% or more of the width of the third n-type region 34a.

[0141] In addition, the direction of the repetit...

Embodiment approach 3

[0144] Figure 10 It is a schematic partial plan view showing a chip of a vertical MOSFET element according to Embodiment 3 of the present invention. Figure 11 is to mean along Figure 10 A vertical cross-sectional view of the state where the line A-A' is cut. The vertical MOSFET of Embodiment 3 is a modified example of Embodiment 2, and differs from Embodiment 2 in the following points. That is, the p-type regions 22b', 30b', 34b' and n-type regions 22a', 30a', 34a' of the first to third parallel pn structures are vertically layered, not planar stripes, and the p-type regions 22b ', 30b', 34b' are planar hexagonal lattice points, and the remaining parts become n-type regions 22a', 30a', 34a'. Conversely, the n-type region may be in the form of hexagonal lattice points, and the remaining part may be a p-type region.

[0145] In addition, if the impurity amount of the third p-type region 34b' is larger than the impurity amount of the third n-type region 34a' in the third p...

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Abstract

To improve the avalanche resistance of an entire element by improving the avalanche resistance of the peripheral part of the element in a super junction semiconductor element. A drain drift part has a first parallel pn structure constituted by alternately and repeatedly bonding a first n-type region and a first p-type region at a pitch P1. The periphery of the drain drift part is the fringe of an element comprising a second parallel pn structure. The fringe of the element continuing to the first parallel pn structure is constituted by alternately and repeatedly bonding a second n-type region and a second p-type region at the pitch P1. Impurity concentrations of the first and the second parallel pn structures are almost equal to each other. A third parallel pn structure formed at a surface layer region of the fringe of the element is constituted by alternately and repeatedly bonding a third n-type region and a third p-type region having the higher impurity concentration than that of the third n-type region at a pitch P2 smaller than the P1. The impurity concentration of the third parallel pn structure is lower than those of the first and the second parallel pn structures.

Description

technical field [0001] The present invention relates to a high withstand voltage and large current capacitor applicable to active elements such as MOSFET (insulated gate electric field effect transistor), IGBT (insulated gate bipolar transistor), and bipolar transistor, or passive elements such as diodes. vertical power semiconductor components. Background technique [0002] Generally, semiconductor elements are classified into: a lateral element having electrodes formed on one side; and a vertical element having electrodes on both sides. The direction in which the drift current flows in the ON state of the vertical semiconductor element is the same as the direction in which the depletion layer grows due to the reverse bias voltage in the OFF state. In the usual planar n-channel vertical MOSFET, the high resistance n - The drift layer portion operates as a region where a drift current flows in the vertical direction when in the ON state. Therefore, if the n - When the cu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/00
CPCH01L29/0634H01L29/7811
Inventor 大西泰彦西村武义新村康井上正范
Owner FUJI ELECTRIC CO LTD
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