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Chemical method for etching insulating-film for flexible printed circuit, and etching solution

An insulating film and chemical etching technology, which is applied in the direction of chemical instruments and methods, surface etching compositions, etc., can solve problems such as difficult operation, and achieve the effect of less equipment investment, convenient actual operation, fast and high-precision etching

Inactive Publication Date: 2006-02-01
AKM ELECTRONICS INDAL PANYU
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the method operation of hydrazine is very difficult

Method used

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Examples

Experimental program
Comparison scheme
Effect test

example 1

[0027] Prepare a piece of 20mm.*10mm, PI (Kapton) single-sided polyimide copper-clad foil substrate with a thickness of 25μm, and place it in 100g of etching solution, which contains 16.7g of NaOH, 50g of ethanol, 33.3g of ionized water.

[0028] Weigh 16.7 grams of NaOH, stir and dissolve in 33.3 grams of deionized water, add 50 grams of ethanol, stir until completely dissolved, and use after standing for a while.

[0029] Before etching, the single-sided copper foil substrate was treated with tap water at a temperature of 85°C for 2 minutes; then the polyimide film was placed in the etching solution, the etching reaction temperature was 85°C, and the etching time was 15 minutes. After removing it from the liquid, wash it in hot tap water at about 85°C, and then wash it in tap water at room temperature for later use. After 15 minutes of etching reaction, it was observed that the PI film on the single-sided polyimide copper-clad foil substrate had not completely reacted.

example 2

[0031] Prepare a piece of 20mm.*10mm, PI (Kapton) single-sided polyimide copper-clad foil substrate with a thickness of 25 μm, and place it in 100g of etching solution, which contains 20 grams of NaOH, 32 grams of ethanol, and 48 grams of water .

[0032] Weigh 20 grams of NaOH, stir and dissolve in 48 grams of deionized water, then add 32 grams of ethanol, stir until completely dissolved, and use after standing for a while.

[0033] Before etching, the polyimide film was treated with tap water at a temperature of 85°C for 2 minutes; then the polyimide film was placed in the etching solution, the etching reaction temperature was 85°C, and the etching time was 15 minutes. After taking it out, wash it in hot tap water at about 85°C, and then wash it in tap water at room temperature. Observing the single-sided polyimide copper-clad foil substrate, the PI film has completely reacted. Further test results show that at 85°C, the etching solution dissolves PI (Kapton) single-sided p...

example 3

[0035] Prepare a piece of 20mm.*10mm, PI (Kapton) single-sided polyimide copper-clad foil substrate with a thickness of 25 μm, and place it in 100g of etching solution, which contains 23 grams of NaOH, 23 grams of ethanol, and 54 grams of water .

[0036] Weigh 23 grams of NaOH, stir and dissolve in 54 grams of deionized water, then add 23 grams of ethanol, stir until it is completely dissolved, and use it after standing for a while.

[0037] Before etching, the polyimide film was treated with tap water at a temperature of 85°C for 2 minutes; then the polyimide film was placed in the etching solution, the etching reaction temperature was 85°C, and the etching time was 15 minutes. After taking it out, wash it in hot tap water at about 85°C, and then wash it in tap water at room temperature. Observing the single-sided polyimide copper-clad foil substrate, the PI film has completely reacted. Further test results show that at 85°C, the etching solution dissolves PI (Kapton) singl...

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Abstract

An etching liquid for preparing the insulating film of flexible PCB is prepared from the solution of potassium (or sodium or lithium) hydroxide (5-40%), C2-C6 unitary (or binary or ternery) alcohol or C2-C6 alcoholamine (or dialcoholamine) (10-70%), potassium (or sodium or lithium) carbonate (0-1.5%) and water (25-60%). Its chemical etching process is also disclosed.

Description

technical field [0001] The invention relates to a chemical etching method for an insulating film of a flexible printed circuit and an etching solution thereof, belonging to the field of printed circuits, in particular to a chemical etching method for a polyimide film as a base material of a flexible printed circuit. Background technique [0002] Flexible printed circuit base material polyimide (PI) film has excellent chemical resistance, mechanical properties and electrical properties, and is widely used in flexible printed circuits and microelectronics as an insulating dielectric layer. Polyimide films used for flexible printed circuits usually include isophthalic polyimide films and biphenyl polyimide films. It is formed by polycondensation of aminophenyl ether, and biphenyl polyimide is formed by polycondensation of biphenyltetracarboxylic dianhydride (BPDA) and diaminodiphenyl ether (DAPE) or p-phenylenediamine. Imides have better chemical resistance and thermal stabili...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K13/06
Inventor 陈兵
Owner AKM ELECTRONICS INDAL PANYU
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