Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Device and method for preparing nanometer oxide nesa by ultrasound rapid deposition method

A transparent conductive film and nano-oxide technology, applied in the direction of metal material coating process, etc., to achieve uniform physical and chemical properties, reduce internal short circuits, and simple equipment.

Inactive Publication Date: 2005-09-21
NANKAI UNIV
View PDF0 Cites 12 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It is difficult to meet the requirement of cost reduction with the existing TCO technology

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Device and method for preparing nanometer oxide nesa by ultrasound rapid deposition method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0030] Preparation of transparent conductive films used in amorphous silicon thin film solar cells, devices such as figure 1 Shown, but to add oxygen cylinders and other carrier gas equipment.

[0031] 1. Preparation process of TCO membrane

[0032] 1.1 Cleaning of substrate material

[0033] The surface of the substrate is first cleaned with deionized water, and then the substrate is soaked in sulfuric acid solution for 2 hours, and then cleaned in an ultrasonic cleaner with an ultrasonic frequency of 20kHz-40Mz for 30 minutes. Take it out and dry it in a clean oven for later use.

[0034] 1.2 Preparation of transparent conductive film

[0035]Firstly, take a certain amount of SnCl4.5H2O, make a solvent with H2O and CH3OH, and then add a certain amount of NH4F aqueous solution in proportion. Put the ultrasonically cleaned 20×20cm glass substrate (6) on the heating furnace (12) and set the temperature of the substrate by the temperature controller (9) to keep the substrate...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a device and method for preparing nanometer oxide nesa by ultrasound rapid deposition method, which comprises an atomization case, a heat reaction chamber and line pipes, wherein the heat reaction chamber is provided with a glass substrate on the bottom, the SnO2 : F solution is atomized by means of supersonic spray method, the nano level particles are sprayed homogeneously onto the glass substrate through an atomization nozzle.

Description

technical field [0001] The present invention relates to a kind of equipment and the method for preparing nano oxide transparent conductive film (TCO), especially relate to using SnO 2 : F (fluorine-doped tin dioxide) adopts the ultrasonic rapid deposition method to prepare a method for a large-area solar cell transparent conductive film and an ultrasonic spray generating device, and the method for preparing a transparent conductive film belongs to the field of semiconductor electronic material coating. Background technique [0002] As a new type of green energy, solar energy has the characteristics of infinity, matching with conventional power grids, and no geographical application restrictions. It has become the first choice for governments to develop new energy sources. Solar cells can directly convert solar energy into electrical energy without any pollution to the environment. Amorphous silicon thin film solar cells have good semiconductor optoelectronic properties, low...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C22/76
Inventor 赵庚申王庆章许盛之王瑜
Owner NANKAI UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com