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Ridge waveguide semiconductor optical device and manufacuring method

A ridge waveguide and semiconductor technology, which is applied in the direction of semiconductor devices, optical waveguide semiconductor structures, electrical components, etc., can solve the problems of difficult completion, high technical requirements, high cost, etc., and achieve simplified preparation process steps and low process technical requirements. High, the effect of improving contact performance

Inactive Publication Date: 2005-06-08
陈农
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AI Technical Summary

Problems solved by technology

[0010] It can be seen that there are many steps in this process and the technical requirements are very high, especially in the case where the ridge waveguide is designed to be narrow or high, it is more difficult to complete the process steps 4 and 5 qualified
Therefore, traditional construction and fabrication techniques have the disadvantages of high cost, low yield, and limited design freedom and performance improvement.

Method used

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  • Ridge waveguide semiconductor optical device and manufacuring method
  • Ridge waveguide semiconductor optical device and manufacuring method

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Embodiment Construction

[0028] see figure 1 , the semiconductor laser in this embodiment has a layered structure, the same as the prior art, the layered structure is also followed by the lower electrode layer 1, the semiconductor substrate layer 2, the active layer 3 and the upper coating layer from bottom to top. Layer 4. Among them, the function of the active layer 3 is mainly to provide light gain, and the function of the upper coating thin layer 4 and the upper coating thick layer 6 is to limit light waves.

[0029] figure 1 It is shown that in this embodiment, the difference from the prior art is that there is a planar insulating layer 5 above the upper coating thin layer 4, and a current injection channel 5a with adjustable width is provided in the center of the planar insulating layer 5. Above the insulating layer 5, with the current injection channel 5a as the center, there is a ridge-shaped upper coating thick layer 6, and the upper coating thick layer 6 is the current contact layer 7, a...

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Abstract

This invention is a ridge waveguide-type semiconductor luminous device and its manufacturing method. It has layer-shaped structure; from the bottom to top is the lower electrode layer, the semiconductor substrate, the activating layer and the upper coating thin layer. The characteristics are: the flat insulation layer is above the upper coating thin layer and its center has the current input channel with width pre-setting and upper part is the current input channel as the center, the ridge upper coating thick layer on which is the current contact layer, the upper electrode layer wholly covers on the surface of the current contact layer and the insulation layer. The advantages are low cost, high finished products ratio and non-limitation of design, it can be widely used for the semiconductor laser, luminous diode, semiconductor amplifier and integrated luminous components.

Description

Technical field: [0001] The invention relates to a semiconductor optical device, including a semiconductor laser, a semiconductor optical amplifier, a light-emitting diode, etc., and a manufacturing method of such devices. Background technique: [0002] Taking the laser as an example, the cross-sectional structure of the traditional ridge waveguide semiconductor laser is attached figure 2 shown. The protruding part in the middle is a ridge-shaped optical waveguide. The insulating layer 8 on both sides of the ridge waveguide plays a role in allowing the external current of the upper electrode to be injected into the active layer 3 only through the ridge waveguide area to generate laser light, thereby reducing the driving current of the semiconductor laser. Its production process is mainly: [0003] 1. The layered structure required for the laser is grown on the semiconductor substrate layer 2 by the crystal epitaxial growth method, in which the active layer 3 that converts...

Claims

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Application Information

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IPC IPC(8): H01L33/20H01S5/22
Inventor 陈农
Owner 陈农
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