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Producing method for thin-membrane transistor liquid-crystal displaying device

A liquid crystal display and thin film transistor technology, applied in semiconductor/solid-state device manufacturing, instruments, optics, etc., can solve the problems of complex etching process, cross-cut, affecting TFT-LCD display, etc., to ensure the quality of the effect.

Inactive Publication Date: 2004-12-08
吉林北方彩晶数码电子有限公司
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  • Abstract
  • Description
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Problems solved by technology

However, the etching process is more complex when etching the gate insulating layer and the passivation layer, and chamfering is easy to occur, and cross-cuts occur during film growth, which affects the display of TFT-LCD

Method used

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  • Producing method for thin-membrane transistor liquid-crystal displaying device
  • Producing method for thin-membrane transistor liquid-crystal displaying device
  • Producing method for thin-membrane transistor liquid-crystal displaying device

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Embodiment Construction

[0032] In order to understand the purpose, features and advantages of the present invention more clearly, the present invention will be further described below in conjunction with the accompanying drawings and embodiments.

[0033] Please refer to FIG. 2a-FIG. 2h, which are schematic cross-sectional steps of a preferred embodiment of the TFT-LCD manufacturing method developed by the present invention to improve the prior art.

[0034] As shown in FIG. 2 a : firstly, a first metal layer is deposited on the surface of the glass substrate 30 (it can be done by molybdenum-tungsten alloy, chromium, aluminum, aluminum alloy or copper). Then, the first photolithography process is performed to etch the first metal layer to form the gate electrode 31 and the scanning lines (not shown) connected to the gate electrode 31 .

[0035] As shown in FIG. 2b: after the first photolithography and etching process is completed, a gate insulating layer 1 32a and a gate insulating layer 2 32b are se...

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Abstract

In the method, a glass base is provided and the first metal layer is formed on base surface as well as to set up grid electrode and scanning line on it, two layers of grid insulation are deposited in sequence and a semiconductor layer is deposited on the two as well as two blocking layers are deposited in sequence with blocking layer patterns limited, doping semiconductor layer and the second metal layer are deposited on blocking layer and to carry on etching to them, contact hole structure can be formed by depositing two passivation layers in sequence and to etch them, finally a transparent conductive layer is deposited as picture element electrode pattern is limited.

Description

technical field [0001] The invention relates to a manufacturing method of a thin film transistor liquid crystal display (TFT-LCD). In particular, it relates to a manufacturing process technology for manufacturing a thin film transistor liquid crystal display by using five photo-etching-processes (PEP). Background technique [0002] With the rapid development of the electronic information industry, the application range and demand of flat panel displays are increasing. In particular, TFT-LCD has become the mainstream product of LCD development due to its high definition, true color video display, light and thin appearance, low power consumption, and no radiation pollution. The existing seven-pass lithography (7PEP) technology for producing TFT-LCD is mature. However, the number of lithography is many, the production cycle is long, the yield is low, and the cost is high. Therefore, TFT-LCD manufacturers are trying to explore the TFT-LCD manufacturing process technology that...

Claims

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Application Information

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IPC IPC(8): G02F1/136H01L21/02
Inventor 邵喜斌林鸿涛于春崎王丽娟郭睿侯旭峰汪梅林
Owner 吉林北方彩晶数码电子有限公司
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