Contact hole shaping method, thin-membrane semiconductor producing method, electronic device and producing method thereof

Abstract

Provided is a method by which contact holes can be formed without using a vacuum device. In this method, mask pillars 40 are formed by exposing and developing resist films at positions corresponding to contact hole forming areas on a source region 16 and a drain region 18 of a polycrystalline silicon film 14 and a gate electrode 34. Then an insulating layer 42 is formed by applying a liquid insulating material to the whole surface of a glass substrate 10 excluding the mask pillars 40. Thereafter, second contact holes 44 and first contact holes 28 are formed through the insulating layer 42 and a gate insulating film 26 by ashing the mask pillars 40.

Description

technical field [0001] The present invention relates to a method of forming a contact hole formed on an interlayer insulating film or the like of a semiconductor device, a method of manufacturing a thin-film semiconductor device, a method of manufacturing an electronic device, and an electronic device. Background technique [0002] In recent years, semiconductor devices as electronic devices have been multilayered in order to achieve high integration. Furthermore, in a semiconductor device having multilayer wiring, when upper and lower wiring patterns arranged through an interlayer insulating film are electrically connected, a contact hole is formed in the interlayer insulating film and is performed through the contact hole. Conventionally, contact holes are generally formed as described in Patent Document 1 as follows. [0003] First, a conductive material such as metal is deposited on a substrate and etched to form a lower wiring layer. Next, an interlayer insulating fil...

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Problems solved by technology

Therefore, the conventional method of forming a contact hole requires an expensive vacuum device in order to dry etch the insulating film.

Moreover, since the process using a vacuum device requires a lot of time, effort and energy to form the contact hole, the maintenance of the vacuum device is not easy.

[0006] In addition, during dry etching, plasma damage (plasma damage) caused by the impact of charged particles on the substrate or charge accumulation on the substrate surface occurs, and there is a problem that the electrical characteristics of the semiconductor device are deteriorated.

Furthermore, during dry etching, there is a problem that it is difficult to sufficiently ensure the selectivity ratio of the insulating film and the conductive film of the lower layer, and the conductive film of the lower layer is etched, and the problem of resistive electrical conduction cannot be achieved.

In addition, there is a problem that the photoresist is hardened during dry etching, and it is difficult to remove the photoresist after etching.

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