High-resisting silicon carbide substrate for semiconductor devices with high breakdown voltage

Abstract

A high-resistivity silicon carbide single crystal is disclosed that includes at least one compensated dopant having an electronic energy level far enough from an edge of the silicon carbide bandgap to avoid conductive behavior, while far enough from mid-gap towards the band edge to create a greater band offset than do mid-level states when the substrate is in contact with a doped silicon carbide epitaxial layer and when the net amount of the dopant present in the crystal is sufficient to pin the Fermi level at the dopant's electronic energy level. The silicon carbide crystal has a resistivity of at least 5000 ohms-centimeters at room temperature.

Description

technical field [0001] The invention relates to semiconductor materials required by high-frequency devices, more precisely to high-resistance silicon carbide materials. Background technique [0002] The present invention relates to modern semiconductor electronic devices and their required semiconductor materials. Whether a semiconductor material is useful depends on its intrinsic properties and the properties it exhibits when it is doped with donor or acceptor atoms. Furthermore, other semiconductor devices require portions of them to be insulating (much like an oxide insulator formed when silicon is oxidized) or semi-insulating. Especially for many devices such as (but not limited to) field-effect transistors ("FETs"), one example of which is the metal-semiconductor field-effect transistor commonly called "MESFET", a semi-insulating (sometimes called "high resistance") The material is useful as a substrate. Although "semi-insulating" and "high resistance" are often used...

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Problems solved by technology

Although such techniques have proven successful, the presence of nitrogen can cause difficulties and inefficiencies in the fabrication and growth process

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