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High sensitivity testing structure for evaluating plasma antenna effect

A testing structure and plasma technology, which is applied in semiconductor/solid-state device testing/measurement, electric solid-state devices, semiconductor devices, etc., can solve the problems of insufficient detection sensitivity of charge monitoring chips, complex structure of charge monitoring chips, and high manufacturing costs.

Inactive Publication Date: 2003-10-29
MACRONIX INT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

As known to those skilled in the art, E 2 The coupling ratio of the PROM cell is between 0.5 and 0.6, which is the main reason for the insufficient detection sensitivity of the charge monitoring chip
In addition, existing E 2 The structure of the charge monitoring chip of the PROM structure is relatively complex, which means that more process steps are required and higher manufacturing costs

Method used

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  • High sensitivity testing structure for evaluating plasma antenna effect
  • High sensitivity testing structure for evaluating plasma antenna effect
  • High sensitivity testing structure for evaluating plasma antenna effect

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Embodiment Construction

[0024] As mentioned earlier, the existing E 2 One of the disadvantages of the charge monitoring chip with PROM structure is that two polysilicon stacked layers need to be fabricated, that is, the floating gate and the control gate structure must be defined separately. Therefore, at least one additional photolithography and etching process and cleaning steps are required in the manufacturing process, resulting in an increase in cost. In addition, more sensitive test structures are needed to evaluate the plasma-derived charges accumulated on the wafer surface. The test structure of the invention has the advantages of high sensitivity, low manufacturing cost and quantitative analysis, and can completely make up for the deficiencies of the prior art.

[0025] see figure 1 , figure 1 It is a schematic top view of the test structure of the present invention. Such as figure 1 As shown, a field effect transistor 12 is provided on a substrate 10 . The substrate 10 is made of a si...

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Abstract

A high-sensitivity testing structure for evaluating the antenna effect of plasma is composed of a substrate, and ONO dielectric layer which consists of a lower oxide layer, a silicon nitride layer and an upper oxide layer, an electrode, and an antenna structure connected with said electrode for collecting the charges induced by plasma.

Description

technical field [0001] The present invention relates to a test wafer for evaluating and monitoring the plasma potential (plasma potential) on the wafer surface, in particular to a kind of NROM (NROM-like) antenna test structure, which is formed on a test wafer and can be used for plasma The resulting charge accumulation is monitored with high sensitivity and provides quantitative data. Background technique [0002] With the miniaturization of integrated circuits, multilayer interconnection technology is becoming more and more complex. At this point, high-density anisotropic plasma etching plays an important role in the semiconductor process. Plasma etching technology can define trench structures with extremely small line widths in the dielectric layer and produce vertical trench profile sidewalls. For example, reactive-ion-etching (RIE) plasma is often used in semiconductor processes to achieve precise dimensional control. Plasma formation is us...

Claims

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Application Information

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IPC IPC(8): H01L23/544
CPCH01L22/34H01L2924/0002H01L2924/00
Inventor 黄仲仁刘光文
Owner MACRONIX INT CO LTD
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