Semiconductor storage device

Abstract

A semiconductor memory device including a memory group divided into a plurality of memory blocks including a first memory block and a second memory block. The first sense amplifier control unit activates the sense amplifier connected to the first memory block in response to the first activation signal. The second sense amplifier control unit activates the sense amplifier connected to the second memory block in response to the second activation signal. The signal control unit outputs the first activation signal and the second activation signal to the first sense amplifier control unit and the second sense amplifier control unit which are separated from each other, and the signal control unit makes the first sense amplifier control unit and the second sense amplifier control unit separate after outputting the first activation signal. The activation signal is delayed by a predetermined time to output the second activation signal to the second sense amplifier control unit.

Description

[0001] This application is based on and claims Japanese Patent Application No. 2002-069065 filed on March 13, 2002, the entire contents of which are hereby incorporated by reference. technical field [0002] The present invention generally relates to a semiconductor memory device including a plurality of memory banks, and more particularly to a nonvolatile semiconductor memory which reduces consumption current at the time of operation of each memory bank to stabilize reading or writing of the semiconductor memory device Enter operation. Background technique [0003] In recent years, the information society has rapidly developed, and large-scale storage devices have required information processing devices such as multipurpose IC cards that pack various application programs. In addition, the use of non-contact type IC cards is increasing, and power supplied to the IC cards is obtained by using microwaves as signal carriers of data to be transmitted. Therefore, there is a need...

AI Technical Summary

Problems solved by technology

Therefore, there is noise caused by the drop or rise of the power supply voltage due to the spike current at the time of the data read operation in the conventional ferroelectric memory device

[0017] In addition, fluctuations in the power supply voltage occur when the sense amplifier starts to activate, which amplifies a small potential difference, and there is a problem that the sense amplifier may malfunction

In addition, the power supply voltage outside the memory chip may be affected by fluctuations in the power supply voltage of the internal circuits of the memory chip, and may cause failure of other circuits on the system including the memory chip such as an IC card

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