Plasma etching gas

Abstract

The gas is suitable for the etching machine of etching silicon oxide to etch silicon layer. The gas at least includes the partial substitutional halothane gas, the entire substitutional halothane gas, argon gas and nitrogen gas. The ratio between the partial substitutional halothane gas and the entire substitutional halothane gas is about 3:1 to 15:1.

Description

technical field [0001] The present invention relates to an etching process for an integrated circuit (Integrated Circuit, IC), and in particular to a plasma etching gas. Background technique [0002] Today, with the vigorous development of integrated circuits, the miniaturization and integration of components is an inevitable trend, and it is also an important topic for active development in all walks of life. Among them, the etching process plays a very important role from the front end to the back end of integrated circuit manufacturing, and often constitutes a key technology with the lithography process. The etching process can be divided into two types, one is wet etching technology, and the other is dry etching technology. Compared with wet etching, dry etching technology has the advantages of low cost, high yield and anisotropic etching, so it has become an indispensable technology in the current integrated circuit process. [0003] At present, semiconductor componen...

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Problems solved by technology

However, adding oxygen to the plasma etching gas will also cause excessive consumption of the organic photoresist mask, resulting in deviation of the Etching Critical Dimension (ECD) (Bias)

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